XSM6J372NW,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
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Технічний опис XSM6J372NW,LXHF Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V, Power Dissipation (Max): 1.51W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: DFN2020B, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): +6V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V.
Інші пропозиції XSM6J372NW,LXHF
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XSM6J372NW,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V Power Dissipation (Max): 1.51W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: DFN2020B Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): +6V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
товару немає в наявності |