YJD15N10A Yangjie Technology
Виробник: Yangjie Technology
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.72 грн |
| 12500+ | 13.36 грн |
| 25000+ | 12.54 грн |
| 50000+ | 11.06 грн |
| 100000+ | 9.94 грн |
| 250000+ | 9.24 грн |
Відгуки про товар
Написати відгук
Технічний опис YJD15N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 10.5A, Pulsed drain current: 60A, Power dissipation: 22.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 16nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJD15N10A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
YJD15N10A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| YJD15N10A |
|
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.