YJD60N04A Yangjie Technology
Виробник: Yangjie Technology
Description: TO-252 N 40V 60A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.41 грн |
| 12500+ | 13.13 грн |
| 25000+ | 12.39 грн |
| 50000+ | 10.85 грн |
| 100000+ | 9.80 грн |
| 250000+ | 9.03 грн |
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Технічний опис YJD60N04A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 42A, Pulsed drain current: 200A, Power dissipation: 35W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: SMD, Gate charge: 29nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJD60N04A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
YJD60N04A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| YJD60N04A |
|
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.