YJG30N06A Yangjie Technology
Виробник: Yangjie Technology
Description: PDFN(5x6) N 60V 30A Transistors
Part Status: Active
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 14.42 грн |
| 25000+ | 13.13 грн |
| 50000+ | 12.38 грн |
| 100000+ | 10.84 грн |
| 200000+ | 9.78 грн |
| 500000+ | 9.07 грн |
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Технічний опис YJG30N06A Yangjie Technology
Description: N-CH MOSFET 60V 30A PDFN5060-8L-, Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Інші пропозиції YJG30N06A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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YJG30N06A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 30A PDFN5060-8L- Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
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YJG30N06A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 30A PDFN5060-8L- Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
товару немає в наявності |