YJH03N10A Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 6.90 грн |
| 5000+ | 6.27 грн |
| 10000+ | 5.90 грн |
| 20000+ | 5.18 грн |
| 40000+ | 4.69 грн |
| 100000+ | 4.34 грн |
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Технічний опис YJH03N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Case: SOT89, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 12A, Power dissipation: 4W, Gate charge: 16nC, Technology: TRENCH POWER MV, Drain current: 2.4A, Kind of channel: enhancement, Drain-source voltage: 100V, Gate-source voltage: ±20V, On-state resistance: 0.12Ω.
Інші пропозиції YJH03N10A за ціною від 5.80 грн до 11.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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YJH03N10A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT89 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 4W Gate charge: 16nC Technology: TRENCH POWER MV Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 100V Gate-source voltage: ±20V On-state resistance: 0.12Ω |
на замовлення 6860 шт: термін постачання 14-30 дні (днів) |
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| YJH03N10A |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 4W
Gate charge: 16nC
Technology: TRENCH POWER MV
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 4W
Gate charge: 16nC
Technology: TRENCH POWER MV
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
на замовлення 6860 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.25 грн |
| 100+ | 7.38 грн |
| 500+ | 6.63 грн |
| 3000+ | 5.80 грн |