YJJ09N03A Yangjie Technology
Виробник: Yangjie Technology
Description: SOT-23-6L N 30V 9A Transistors
Part Status: Active
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.82 грн |
| 15000+ | 6.19 грн |
| 30000+ | 5.81 грн |
| 60000+ | 5.10 грн |
| 120000+ | 4.60 грн |
| 300000+ | 4.25 грн |
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Технічний опис YJJ09N03A Yangjie Technology
Description: N-CH MOSFET 30V 9A SOT-23-6L, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23-6L.
Інші пропозиції YJJ09N03A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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YJJ09N03A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 9A SOT-23-6LInput Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-23-6L |
товару немає в наявності |
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YJJ09N03A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 9A SOT-23-6LInput Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-6L Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Power Dissipation (Max): 1.25W (Ta) |
товару немає в наявності |
