YJL2102W Yangzhou Yangjie Electronic Technology Co.,Ltd

Description: N-CH MOSFET 20V 3A SOT-323, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 250mW (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).