YJL2302A Yangjie Technology
Виробник: Yangjie Technology
Description: SOT-23 N 20V 4.3A Transistors F
Part Status: Active
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.12 грн |
| 15000+ | 1.89 грн |
| 30000+ | 1.81 грн |
| 60000+ | 1.56 грн |
| 120000+ | 1.42 грн |
| 300000+ | 1.35 грн |
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Технічний опис YJL2302A Yangjie Technology
Description: N-CH MOSFET 20V 4.3A SOT-23-3L, Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції YJL2302A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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YJL2302A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 4.3A SOT-23-3L Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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YJL2302A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 4.3A SOT-23-3L Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
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YJL2302A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 37mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |