YJL2312A Yangjie Technology
Виробник: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.71 грн |
| 15000+ | 2.46 грн |
| 30000+ | 2.31 грн |
| 60000+ | 2.03 грн |
| 120000+ | 1.82 грн |
| 300000+ | 1.75 грн |
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Технічний опис YJL2312A Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції YJL2312A за ціною від 2.84 грн до 3.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
YJL2312A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 27A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1490 шт: термін постачання 14-30 дні (днів) |
|
| YJL2312A |
|
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.82 грн |
| 130+ | 3.20 грн |
| 500+ | 2.84 грн |