YJL3400A Yangzhou Yangjie Electronic Technology Co.,Ltd
Виробник: Yangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.69 грн |
| 19+ | 16.40 грн |
| 100+ | 8.71 грн |
Відгуки про товар
Написати відгук
Технічний опис YJL3400A Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V.
Інші пропозиції YJL3400A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
YJL3400A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
товару немає в наявності |
|
 |
YJL3400A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 23A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |