YJL3401AL Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.87 грн |
| 15000+ | 3.51 грн |
| 30000+ | 3.36 грн |
| 60000+ | 2.94 грн |
| 120000+ | 2.66 грн |
| 300000+ | 2.45 грн |
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Технічний опис YJL3401AL Yangjie Technology
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -3.5A, Pulsed drain current: -27A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±12V, On-state resistance: 96mΩ, Mounting: SMD, Gate charge: 7.2nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJL3401AL за ціною від 3.76 грн до 9.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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YJL3401AL | YANGJIE TECHNOLOGY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 450 шт: термін постачання 14-30 дні (днів) |
|
| YJL3401AL |
|
Виробник: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 450 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.09 грн |
| 115+ | 3.76 грн |