YJQ40P03A Yangzhou Yangjie Electronic Technology Co.,Ltd
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Part Status: Active
Supplier Device Package: 8-DFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 32W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис YJQ40P03A Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L, Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V, Part Status: Active, Supplier Device Package: 8-DFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 32W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції YJQ40P03A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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YJQ40P03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 40A DFN3333-8L Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Part Status: Active Supplier Device Package: 8-DFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 32W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| YJQ40P03A |
|
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Part Status: Active
Supplier Device Package: 8-DFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 32W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: P-CH MOSFET 30V 40A DFN3333-8L
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Part Status: Active
Supplier Device Package: 8-DFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 32W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.