YJS03N10A Yangjie Technology
Виробник: Yangjie Technology
Description: SOT-23-6L N 100V 3A Transistors
Part Status: Active
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.28 грн |
| 15000+ | 6.63 грн |
| 30000+ | 6.25 грн |
| 60000+ | 5.51 грн |
| 120000+ | 4.93 грн |
| 300000+ | 4.58 грн |
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Технічний опис YJS03N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W, Type of transistor: N-MOSFET, Technology: TRENCH POWER HV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.4A, Pulsed drain current: 15A, Power dissipation: 1.5W, Case: SOT23-6, Gate-source voltage: ±20V, On-state resistance: 0.14Ω, Mounting: SMD, Gate charge: 19.2nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJS03N10A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
YJS03N10A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W Type of transistor: N-MOSFET Technology: TRENCH POWER HV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 15A Power dissipation: 1.5W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| YJS03N10A |
|
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.