YJS2301A Yangjie Technology
Виробник: Yangjie Technology
Description: SOT-23-6L P -20V -3.7A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.19 грн |
| 15000+ | 4.70 грн |
| 30000+ | 4.40 грн |
| 60000+ | 3.92 грн |
| 120000+ | 3.50 грн |
| 300000+ | 3.22 грн |
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Технічний опис YJS2301A Yangjie Technology
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A, Type of transistor: P-MOSFET x2, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3A, Pulsed drain current: -16A, Power dissipation: 1.3W, Case: SOT23-6, Gate-source voltage: ±10V, On-state resistance: 95mΩ, Mounting: SMD, Gate charge: 4.3nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJS2301A за ціною від 3.95 грн до 5.31 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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YJS2301A | YANGJIE TECHNOLOGY |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A Type of transistor: P-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -16A Power dissipation: 1.3W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 770 шт: термін постачання 14-30 дні (днів) |
|
| YJS2301A |
|
Виробник: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 770 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 5.31 грн |
| 100+ | 4.44 грн |
| 500+ | 3.95 грн |