YJSD12N03A Yangjie Technology
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 11.66 грн |
| 20000+ | 10.58 грн |
| 40000+ | 10.00 грн |
| 80000+ | 8.78 грн |
| 160000+ | 7.90 грн |
| 400000+ | 7.29 грн |
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Технічний опис YJSD12N03A Yangjie Technology
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A, Type of transistor: N-MOSFET x2, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 9.6A, Pulsed drain current: 50A, Power dissipation: 2.5W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: SMD, Gate charge: 23.6nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції YJSD12N03A за ціною від 9.62 грн до 18.13 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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YJSD12N03A | YANGJIE TECHNOLOGY |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.6A Pulsed drain current: 50A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7235 шт: термін постачання 14-30 дні (днів) |
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| YJSD12N03A |
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Виробник: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7235 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.13 грн |
| 35+ | 12.27 грн |
| 100+ | 10.86 грн |
| 500+ | 9.62 грн |