YQ1VWM10ATR ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.69 грн |
| 14+ | 22.71 грн |
| 100+ | 12.77 грн |
| 500+ | 11.32 грн |
| 1000+ | 9.60 грн |
| 3000+ | 7.32 грн |
| 9000+ | 6.35 грн |
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Технічний опис YQ1VWM10ATR ROHM Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 1A, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: PMDE, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A, Current - Reverse Leakage @ Vr: 6 µA @ 100 V.
Інші пропозиції YQ1VWM10ATR за ціною від 10.25 грн до 47.37 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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YQ1VWM10ATR | Rohm Semiconductor |
 Description: TRENCH MOS STRUCTURE, 100V, 1APackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 6 µA @ 100 V |
на замовлення 2768 шт: термін постачання 21-31 дні (днів) |
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| YQ1VWM10ATR |
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Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 1A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
Description: TRENCH MOS STRUCTURE, 100V, 1A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
на замовлення 2768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.37 грн |
| 12+ | 27.00 грн |
| 25+ | 22.20 грн |
| 100+ | 15.76 грн |
| 250+ | 13.25 грн |
| 500+ | 11.71 грн |
| 1000+ | 10.25 грн |