YQ20BGE10SDTL ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
на замовлення 4978 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.65 грн |
| 10+ | 77.92 грн |
| 100+ | 53.01 грн |
| 500+ | 44.9 грн |
| 1000+ | 40.59 грн |
| 2500+ | 34.47 грн |
| 5000+ | 32.81 грн |
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Технічний опис YQ20BGE10SDTL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable.