YQ5LAM10ETFTR ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.45 грн |
| 10+ | 60.73 грн |
| 100+ | 35.00 грн |
| 500+ | 27.41 грн |
| 1000+ | 24.99 грн |
| 3000+ | 22.78 грн |
| 6000+ | 21.95 грн |
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Технічний опис YQ5LAM10ETFTR ROHM Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: PMDTM, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції YQ5LAM10ETFTR за ціною від 27.84 грн до 111.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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YQ5LAM10ETFTR | Rohm Semiconductor |
 Description: TRENCH MOS STRUCTURE, 100V, 5APackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 2632 шт: термін постачання 21-31 дні (днів) |
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| YQ5LAM10ETFTR |
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Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
на замовлення 2632 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.84 грн |
| 10+ | 66.19 грн |
| 25+ | 55.31 грн |
| 100+ | 40.38 грн |
| 250+ | 34.71 грн |
| 500+ | 31.23 грн |
| 1000+ | 27.84 грн |