ZTX558QSTZ Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS PNP DARL 400V 0.2A E-LINE
Grade: Automotive
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 200 mA
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Технічний опис ZTX558QSTZ Diodes Incorporated
Description: TRANS PNP DARL 400V 0.2A E-LINE, Grade: Automotive, Supplier Device Package: E-Line (TO-92 compatible), Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Through Hole, Package / Case: E-Line-3, Formed Leads, Packaging: Tape & Box (TB), Qualification: AEC-Q101, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 200 mA.
Інші пропозиції ZTX558QSTZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| ZTX558QSTZ | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K |
товару немає в наявності |
В кошику од. на суму грн. |
| ZTX558QSTZ |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K
Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K
товару немає в наявності
В кошику
од. на суму грн.