ZTX601QSTZ Diodes Incorporated
Виробник: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR EP3 AMMO
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: PWR MID PERF TRANSISTOR EP3 AMMO
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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Технічний опис ZTX601QSTZ Diodes Incorporated
Description: PWR MID PERF TRANSISTOR EP3 AMMO, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Frequency - Transition: 250MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 1 W.
Інші пропозиції ZTX601QSTZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| ZTX601QSTZ | Виробник : Diodes Incorporated | Darlington Transistors Pwr Mid Perf Transistor EP3 AMMO 4K |
товар відсутній |