ZTX857QSTZ Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS NPN 300V 3A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Packaging: Tape & Box (TB)
Відгуки про товар
Написати відгук
Технічний опис ZTX857QSTZ Diodes Incorporated
Description: TRANS NPN 300V 3A E-LINE, Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: E-Line (TO-92 compatible), Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: E-Line-3, Formed Leads, Packaging: Tape & Box (TB).
Інші пропозиції ZTX857QSTZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| ZTX857QSTZ | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K |
товару немає в наявності |
В кошику од. на суму грн. |
| ZTX857QSTZ |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K
Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K
товару немає в наявності
В кошику
од. на суму грн.