ZTX857QSTZ Diodes Incorporated


ZTX857.pdf Виробник: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR EP3 AM
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
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Технічний опис ZTX857QSTZ Diodes Incorporated

Description: PWR HI VOLTAGE TRANSISTOR EP3 AM, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V, Frequency - Transition: 80MHz, Supplier Device Package: E-Line (TO-92 compatible), Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.2 W.

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ZTX857QSTZ Виробник : Diodes Incorporated ZTX857.pdf Bipolar Transistors - BJT Pwr Hi Voltage Transistor EP3 AMMO 4K
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