Технічний опис ZVN2120ASTOA
Description: MOSFET N-CH 200V 180MA E-LINE, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: E-Line (TO-92 compatible), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V, Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: E-Line-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V.
Інші пропозиції ZVN2120ASTOA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
ZVN2120ASTOA | Diodes Incorporated |
Description: MOSFET N-CH 200V 180MA E-LINEVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Drain to Source Voltage (Vdss): 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
ZVN2120ASTOA | Diodes Incorporated |
MOSFET N-Chnl 200V |
товару немає в наявності |
В кошику од. на суму грн. |
| ZVN2120ASTOA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 200V 180MA E-LINE
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Description: MOSFET N-CH 200V 180MA E-LINE
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
товару немає в наявності
В кошику
од. на суму грн.
| ZVN2120ASTOA |
![]() |
Виробник: Diodes Incorporated
MOSFET N-Chnl 200V
MOSFET N-Chnl 200V
товару немає в наявності
В кошику
од. на суму грн.



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