ZVP2120ASTZ

ZVP2120ASTZ Diodes Zetex


zvp2120a.pdf
Виробник: Diodes Zetex
Trans MOSFET P-CH 200V 0.12A 3-Pin E-Line T/R
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Технічний опис ZVP2120ASTZ Diodes Zetex

Description: MOSFET P-CH 200V 120MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-92, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.

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ZVP2120ASTZ ZVP2120ASTZ Diodes Incorporated ZVP2120A.pdf Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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ZVP2120ASTZ ZVP2120ASTZ Diodes Incorporated ZVP2120A.pdf MOSFETs P-Chnl 200V
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ZVP2120ASTZ DIODES INCORPORATED ZVP2120A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -120mA; Idm: -1.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.12A
Pulsed drain current: -1.2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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ZVP2120ASTZ ZVP2120A.pdf
ZVP2120ASTZ
Виробник: Diodes Incorporated
Description: MOSFET P-CH 200V 120MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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ZVP2120ASTZ ZVP2120A.pdf
ZVP2120ASTZ
Виробник: Diodes Incorporated
MOSFETs P-Chnl 200V
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ZVP2120ASTZ ZVP2120A.pdf
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -120mA; Idm: -1.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.12A
Pulsed drain current: -1.2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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