ZXM61N02FTA

Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.7A SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V

Виробник: Diodes Zetex
Trans MOSFET N-CH 20V 1.7A 3-Pin SOT-23 T/R

Виробник: Diodes Zetex
Trans MOSFET N-CH 20V 1.7A 3-Pin SOT-23 T/R

Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement

Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V

Виробник: Diodes Incorporated
MOSFETs 20V N-Chnl HDMOS