ZXM62N03GTA Diodes Incorporated

Description: MOSFET N-CH 30V 3.4A/4.7A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).