ZXM62P03E6TC Diodes Incorporated

Description: MOSFET P-CH 30V 1.5A SOT26, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 625mW (Ta), Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).