Технічний опис ZXMC3A16DN8QTA Diodes Zetex
Description: MOSFET N/P-CH 30V 6.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції ZXMC3A16DN8QTA за ціною від 49.37 грн до 64.28 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMC3A16DN8QTA | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| ZXMC3A16DN8QTA |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 64.28 грн |
| 1000+ | 57.09 грн |
| 1500+ | 54.64 грн |
| 2500+ | 49.37 грн |