ZXMC4559DN8TA DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 4+ | 119.42 грн |
| 10+ | 66.37 грн |
| 25+ | 56.72 грн |
| 100+ | 44.44 грн |
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Технічний опис ZXMC4559DN8TA DIODES INCORPORATED
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції ZXMC4559DN8TA за ціною від 45.36 грн до 137.02 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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ZXMC4559DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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ZXMC4559DN8TA | Diodes Incorporated |
MOSFETs Comp. 60V NP-Chnl |
на замовлення 3328 шт: термін постачання 21-30 дні (днів) |
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| ZXMC4559DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.54 грн |
| 10+ | 80.00 грн |
| 100+ | 53.74 грн |
| ZXMC4559DN8TA |
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Виробник: Diodes Incorporated
MOSFETs Comp. 60V NP-Chnl
MOSFETs Comp. 60V NP-Chnl
на замовлення 3328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.02 грн |
| 10+ | 86.54 грн |
| 100+ | 50.21 грн |
| 500+ | 45.36 грн |