ZXMC6A09DN8TA Diodes Incorporated

Description: MOSFET N/P-CH 60V 3.9A/3.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A, Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, 1580pF @ 40V, Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.