ZXMHC3F381N8TC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 30V 3.98A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.98A, 3.36A
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V, 670pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N/2P-CH 30V 3.98A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.98A, 3.36A
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V, 670pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 26.13 грн |
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Технічний опис ZXMHC3F381N8TC Diodes Incorporated
Description: DIODES INC. - ZXMHC3F381N8TC - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 30 V, 30 V, 3.98 A, 3.98 A, 0.033 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.98A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.98A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 870mW, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Anzahl der Pins: 8Pins, Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm, productTraceability: Yes-Date/Lot Code, Verlustleistung, n-Kanal: 870mW, Betriebstemperatur, max.: 150°C.
Інші пропозиції ZXMHC3F381N8TC за ціною від 23.61 грн до 81.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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ZXMHC3F381N8TC | Виробник : DIODES INC. |
Description: DIODES INC. - ZXMHC3F381N8TC - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 30 V, 30 V, 3.98 A, 3.98 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.98A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.98A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 870mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 870mW Betriebstemperatur, max.: 150°C |
на замовлення 1780 шт: термін постачання 21-31 дні (днів) |
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ZXMHC3F381N8TC | Виробник : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 30V 3.98A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 870mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.98A, 3.36A Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V, 670pF @ 15V Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
на замовлення 167922 шт: термін постачання 21-31 дні (днів) |
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ZXMHC3F381N8TC | Виробник : Diodes Incorporated | MOSFET MOSFET H-BRIDGE SOP-8L |
на замовлення 26069 шт: термін постачання 21-30 дні (днів) |
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ZXMHC3F381N8TC | Виробник : DIODES INC. |
Description: DIODES INC. - ZXMHC3F381N8TC - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 30 V, 30 V, 3.98 A, 3.98 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.98A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.98A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 870mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 870mW Betriebstemperatur, max.: 150°C |
на замовлення 1780 шт: термін постачання 21-31 дні (днів) |
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ZXMHC3F381N8TC | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3.98/-3.36A Pulsed drain current: 22.9...-19.6A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: MOSFET H-Bridge кількість в упаковці: 1 шт |
товар відсутній |
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ZXMHC3F381N8TC | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3.98/-3.36A Pulsed drain current: 22.9...-19.6A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: MOSFET H-Bridge |
товар відсутній |