ZXMHC6A07N8TC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 1.39A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
Drain to Source Voltage (Vdss): 60V
Power - Max: 870mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Технічний опис ZXMHC6A07N8TC Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 1.39A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V, Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A, Drain to Source Voltage (Vdss): 60V, Power - Max: 870mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N and 2 P-Channel (Full Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).
Інші пропозиції ZXMHC6A07N8TC за ціною від 31.97 грн до 117.01 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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ZXMHC6A07N8TC | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 60V 1.39A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 870mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
на замовлення 289923 шт: термін постачання 21-31 дні (днів) |
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ZXMHC6A07N8TC | Diodes Incorporated |
MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A |
на замовлення 42112 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
| ZXMHC6A07N8TC |
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на замовлення 2500 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| ZXMHC6A07N8TC |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 1.39A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N/2P-CH 60V 1.39A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
на замовлення 289923 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.01 грн |
| 10+ | 70.44 грн |
| 100+ | 46.43 грн |
| 500+ | 35.02 грн |
| 1000+ | 31.97 грн |
| ZXMHC6A07N8TC |
|
Виробник: Diodes Incorporated
MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A
MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A
на замовлення 42112 шт:
термін постачання 21-30 дні (днів)