ZXMHC6A07T8TA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 1.6A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 233pF @ 30V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
| Кількість | Ціна |
|---|---|
| 1000+ | 59.79 грн |
| 2000+ | 53.41 грн |
| 3000+ | 51.30 грн |
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Технічний опис ZXMHC6A07T8TA Diodes Incorporated
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 1.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 1.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm, Verlustleistung, p-Kanal: 1.7W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.7W, Betriebstemperatur, max.: 150°C, SVHC: Lead (25-Jun-2025).
Інші пропозиції ZXMHC6A07T8TA за ціною від 50.21 грн до 219.06 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ZXMHC6A07T8TA | DIODES INC. |
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.8A Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm Verlustleistung, p-Kanal: 1.7W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.7W Betriebstemperatur, max.: 150°C SVHC: Lead (25-Jun-2025) |
на замовлення 967 шт: термін постачання 21-31 дні (днів) |
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ZXMHC6A07T8TA | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 1.4/-1.2A Power dissipation: 1.36W Case: SO8 Gate-source voltage: ±20V On-state resistance: 250/400mΩ Mounting: SMD Gate charge: 3.2/5.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
на замовлення 2725 шт: термін постачання 14-30 дні (днів) |
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ZXMHC6A07T8TA | Diodes Incorporated |
MOSFETs 60V UMOS H-Bridge |
на замовлення 3207 шт: термін постачання 21-30 дні (днів) |
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ZXMHC6A07T8TA | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 60V 1.6A SM8 Packaging: Cut Tape (CT) Package / Case: SOT-223-8 Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 233pF @ 30V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SM8 |
на замовлення 3676 шт: термін постачання 21-31 дні (днів) |
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ZXMHC6A07T8TA | DIODES INC. |
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.8A Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm Verlustleistung, p-Kanal: 1.7W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.7W Betriebstemperatur, max.: 150°C SVHC: Lead (25-Jun-2025) |
на замовлення 967 шт: термін постачання 21-31 дні (днів) |
|
| ZXMHC6A07T8TA |
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Виробник: DIODES INC.
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 1.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm
Verlustleistung, p-Kanal: 1.7W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.7W
Betriebstemperatur, max.: 150°C
SVHC: Lead (25-Jun-2025)
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 1.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm
Verlustleistung, p-Kanal: 1.7W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.7W
Betriebstemperatur, max.: 150°C
SVHC: Lead (25-Jun-2025)
на замовлення 967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 119.79 грн |
| 200+ | 89.90 грн |
| 500+ | 66.46 грн |
| ZXMHC6A07T8TA |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
на замовлення 2725 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.00 грн |
| 10+ | 100.73 грн |
| 50+ | 78.73 грн |
| 100+ | 77.03 грн |
| ZXMHC6A07T8TA |
|
Виробник: Diodes Incorporated
MOSFETs 60V UMOS H-Bridge
MOSFETs 60V UMOS H-Bridge
на замовлення 3207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.04 грн |
| 10+ | 113.22 грн |
| 100+ | 67.72 грн |
| 500+ | 53.94 грн |
| 1000+ | 50.21 грн |
| ZXMHC6A07T8TA |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 1.6A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 233pF @ 30V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Description: MOSFET 2N/2P-CH 60V 1.6A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 233pF @ 30V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
на замовлення 3676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.55 грн |
| 10+ | 113.90 грн |
| 100+ | 77.90 грн |
| 500+ | 58.67 грн |
| ZXMHC6A07T8TA |
|
Виробник: DIODES INC.
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 1.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm
Verlustleistung, p-Kanal: 1.7W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.7W
Betriebstemperatur, max.: 150°C
SVHC: Lead (25-Jun-2025)
Description: DIODES INC. - ZXMHC6A07T8TA - Dual-MOSFET, H-Brücke, Komplementärer n- und p-Kanal, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 1.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 1.5ohm
Verlustleistung, p-Kanal: 1.7W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.7W
Betriebstemperatur, max.: 150°C
SVHC: Lead (25-Jun-2025)
на замовлення 967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 219.06 грн |
| 10+ | 141.94 грн |
| 50+ | 119.79 грн |
| 200+ | 89.90 грн |
| 500+ | 66.46 грн |