ZXMHN6A07T8TA Diodes Incorporated

Description: MOSFET 4N-CH 60V 1.4A SM8, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Surface Mount, Package / Case: SOT-223-8, Packaging: Tape & Reel (TR), Supplier Device Package: SM8, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 1.4A.