ZXMN10A25KTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Відгуки про товар
Написати відгук
Технічний опис ZXMN10A25KTC Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V, Power Dissipation (Max): 2.11W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V.
Інші пропозиції ZXMN10A25KTC за ціною від 38.82 грн до 157.53 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZXMN10A25KTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 4.2A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Power Dissipation (Max): 2.11W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V |
на замовлення 4509 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
ZXMN10A25KTC | Diodes Incorporated |
MOSFETs N-Chan 100V MOSFET (UMOS) |
на замовлення 4326 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| ZXMN10A25KTC |
|
на замовлення 78000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| ZXMN10A25KTC |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Description: MOSFET N-CH 100V 4.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
на замовлення 4509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 92.95 грн |
| 100+ | 62.96 грн |
| 500+ | 47.03 грн |
| 1000+ | 43.15 грн |
| ZXMN10A25KTC |
![]() |
Виробник: Diodes Incorporated
MOSFETs N-Chan 100V MOSFET (UMOS)
MOSFETs N-Chan 100V MOSFET (UMOS)
на замовлення 4326 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 157.53 грн |
| 10+ | 93.81 грн |
| 100+ | 58.09 грн |
| 500+ | 46.84 грн |
| 1000+ | 42.97 грн |
| 2500+ | 38.82 грн |



