ZXMN2F34FHTA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.69 грн |
| 6000+ | 8.77 грн |
| 15000+ | 8.20 грн |
| 30000+ | 7.06 грн |
| 75000+ | 6.79 грн |
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Технічний опис ZXMN2F34FHTA Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції ZXMN2F34FHTA за ціною від 9.14 грн до 50.79 грн
| Фото | Назва | Виробник | Інформація |
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ZXMN2F34FHTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 112155 шт: термін постачання 21-31 дні (днів) |
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ZXMN2F34FHTA | Diodes Incorporated |
MOSFETs 20V N-Channel Enhance. Mode MOSFET |
на замовлення 45844 шт: термін постачання 21-30 дні (днів) |
|
| ZXMN2F34FHTA |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 112155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 12+ | 26.59 грн |
| 100+ | 18.09 грн |
| 500+ | 12.74 грн |
| 1000+ | 9.55 грн |
| ZXMN2F34FHTA |
|
Виробник: Diodes Incorporated
MOSFETs 20V N-Channel Enhance. Mode MOSFET
MOSFETs 20V N-Channel Enhance. Mode MOSFET
на замовлення 45844 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.79 грн |
| 11+ | 30.89 грн |
| 100+ | 17.23 грн |
| 500+ | 13.08 грн |
| 1000+ | 11.74 грн |
| 3000+ | 9.99 грн |
| 6000+ | 9.14 грн |