ZXMN3A04KTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
на замовлення 2080 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 125.75 грн |
10+ | 100.33 грн |
100+ | 79.84 грн |
500+ | 63.4 грн |
1000+ | 53.79 грн |
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Технічний опис ZXMN3A04KTC Diodes Incorporated
Description: MOSFET N-CH 30V 18.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 1V @ 250mA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції ZXMN3A04KTC за ціною від 55.86 грн до 151.89 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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ZXMN3A04KTC | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 18.4A DPAK Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250mA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 2080 шт: термін постачання 21-31 дні (днів) |
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ZXMN3A04KTC | Виробник : Diodes Incorporated | MOSFET N-Ch 30 Volt 18.4A |
на замовлення 1549 шт: термін постачання 21-30 дні (днів) |
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ZXMN3A04KTC |
на замовлення 25000 шт: термін постачання 14-28 дні (днів) |
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ZXMN3A04KTC | Виробник : Diodes Zetex | Trans MOSFET N-CH 30V 12A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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ZXMN3A04KTC | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 18.4A DPAK Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250mA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V Qualification: AEC-Q101 |
товар відсутній |