ZXMN3F31DN8TA Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 15500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 500+ | 30.05 грн |
| 1000+ | 26.30 грн |
| 1500+ | 24.95 грн |
| 2500+ | 22.00 грн |
| 3500+ | 21.16 грн |
| 5000+ | 20.34 грн |
| 12500+ | 18.91 грн |
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Технічний опис ZXMN3F31DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.7A, Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції ZXMN3F31DN8TA за ціною від 20.28 грн до 92.94 грн
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ZXMN3F31DN8TA | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 5.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 10669 шт: термін постачання 21-31 дні (днів) |
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ZXMN3F31DN8TA | Виробник : Diodes Incorporated |
MOSFETs 30V Dual N-channel Enhance. Mode MOSFET |
на замовлення 634 шт: термін постачання 21-30 дні (днів) |
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ZXMN3F31DN8TA | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 5.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 15774 шт: термін постачання 21-31 дні (днів) |
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