ZXMN6A08E6QTA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
| Кількість | Ціна |
|---|---|
| 3000+ | 22.78 грн |
Відгуки про товар
Написати відгук
Технічний опис ZXMN6A08E6QTA Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.1W (Ta).
Інші пропозиції ZXMN6A08E6QTA за ціною від 20.11 грн до 92.06 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ZXMN6A08E6QTA | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 2.8A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 4468 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
ZXMN6A08E6QTA | Виробник : Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 20Vgs 80mOhm |
на замовлення 2946 шт: термін постачання 21-30 дні (днів) |
|