ZXMN6A25DN8TA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
| Кількість | Ціна |
|---|---|
| 500+ | 43.20 грн |
| 1000+ | 38.10 грн |
| 1500+ | 36.32 грн |
| 2500+ | 32.20 грн |
| 3500+ | 31.09 грн |
| 5000+ | 30.54 грн |
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Технічний опис ZXMN6A25DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції ZXMN6A25DN8TA за ціною від 54.11 грн до 131.33 грн
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ZXMN6A25DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.8A 8SO Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 60V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V |
на замовлення 127449 шт: термін постачання 21-31 дні (днів) |
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| ZXMN6A25DN8TA |
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на замовлення 200 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| ZXMN6A25DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Description: MOSFET 2N-CH 60V 3.8A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
на замовлення 127449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 131.33 грн |
| 10+ | 80.30 грн |
| 100+ | 54.11 грн |