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ZXMN6A25KTC

ZXMN6A25KTC Diodes Incorporated

ZXMN6A25K.pdf
Виробник: Diodes Incorporated
MOSFETs N-Chan 60V MOSFET (UMOS)
на замовлення 5560 шт:
термін постачання 21-30 дні (днів)
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Технічний опис ZXMN6A25KTC Diodes Incorporated

Description: MOSFET N-CH 60V 7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V, Power Dissipation (Max): 2.11W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V.

Інші пропозиції ZXMN6A25KTC

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
ZXMN6A25KTC ZXMN6A25KTC Diodes Incorporated ZXMN6A25K.pdf Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXMN6A25KTC ZXMN6A25KTC Diodes Incorporated ZXMN6A25K.pdf Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
товару немає в наявності
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ZXMN6A25KTC ZXMN6A25KTC DIODES INCORPORATED ZXMN6A25K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 4.25W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 4.25W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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ZXMN6A25KTC Diodes Zetex ZXMN6A25K.pdf Trans MOSFET N-CH 60V 10.7A 3-Pin(2+Tab) DPAK T/R
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXMN6A25KTC ZXMN6A25K.pdf
ZXMN6A25KTC
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXMN6A25KTC ZXMN6A25K.pdf
ZXMN6A25KTC
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
ZXMN6A25KTC ZXMN6A25K.pdf
ZXMN6A25KTC
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 4.25W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 4.25W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
ZXMN6A25KTC ZXMN6A25K.pdf
Виробник: Diodes Zetex
Trans MOSFET N-CH 60V 10.7A 3-Pin(2+Tab) DPAK T/R
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.