ZXMP10A13FTA-50 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23 (Type DN)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625mW
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Технічний опис ZXMP10A13FTA-50 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT23 T&R, Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-23 (Type DN), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 625mW, Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.