ZXMP10A16KTC Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 27.02 грн |
| 5000+ | 24.13 грн |
| 7500+ | 23.52 грн |
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Технічний опис ZXMP10A16KTC Diodes Incorporated
Description: MOSFET P-CH 100V 3A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.15W (Ta), Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції ZXMP10A16KTC за ціною від 24.75 грн до 102.85 грн
| Фото | Назва | Виробник | Інформація |
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ZXMP10A16KTC | Diodes Incorporated |
MOSFETs P-Chan 100V MOSFET (UMOS) |
на замовлення 3735 шт: термін постачання 21-30 дні (днів) |
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ZXMP10A16KTC | Diodes Incorporated |
Description: MOSFET P-CH 100V 3A TO252-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.15W (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V |
на замовлення 41123 шт: термін постачання 21-31 дні (днів) |
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| ZXMP10A16KTC |
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Виробник: Diodes Incorporated
MOSFETs P-Chan 100V MOSFET (UMOS)
MOSFETs P-Chan 100V MOSFET (UMOS)
на замовлення 3735 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.53 грн |
| 10+ | 61.55 грн |
| 100+ | 36.64 грн |
| 500+ | 29.61 грн |
| 1000+ | 27.22 грн |
| 2500+ | 24.75 грн |
| ZXMP10A16KTC |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 3A TO252-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Description: MOSFET P-CH 100V 3A TO252-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.15W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
на замовлення 41123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.85 грн |
| 10+ | 63.01 грн |
| 100+ | 41.92 грн |
| 500+ | 30.86 грн |
| 1000+ | 28.13 грн |