ZXMP2120G4TA Diodes Incorporated
на замовлення 1990 шт:
термін постачання 21-30 дні (днів)
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Технічний опис ZXMP2120G4TA Diodes Incorporated
Description: MOSFET P-CH 200V 200MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Інші пропозиції ZXMP2120G4TA
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ZXMP2120G4TA | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.2A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -200mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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ZXMP2120G4TA | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 200V 200MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
товар відсутній |
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ZXMP2120G4TA | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.2A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -200mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |