ZXMP4A16GQTA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1000+ | 31.18 грн |
| 2000+ | 27.54 грн |
| 3000+ | 26.28 грн |
| 5000+ | 23.32 грн |
| 7000+ | 22.53 грн |
| 10000+ | 22.46 грн |
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Технічний опис ZXMP4A16GQTA Diodes Incorporated
Description: MOSFET P-CH 40V SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції ZXMP4A16GQTA за ціною від 25.04 грн до 104.43 грн
| Фото | Назва | Виробник | Інформація |
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ZXMP4A16GQTA | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
на замовлення 572 шт: термін постачання 21-30 дні (днів) |
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ZXMP4A16GQTA | Diodes Incorporated |
Description: MOSFET P-CH 40V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 49222 шт: термін постачання 21-31 дні (днів) |
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| ZXMP4A16GQTA |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
на замовлення 572 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 95.17 грн |
| 10+ | 62.44 грн |
| 100+ | 37.20 грн |
| 500+ | 29.40 грн |
| 1000+ | 26.72 грн |
| 2000+ | 25.04 грн |
| ZXMP4A16GQTA |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
на замовлення 49222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 104.43 грн |
| 10+ | 63.54 грн |
| 100+ | 42.15 грн |
| 500+ | 30.95 грн |