ZXMP6A16DN8QTA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
| Кількість | Ціна |
|---|---|
| 500+ | 45.96 грн |
| 1000+ | 40.58 грн |
| 1500+ | 38.71 грн |
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Технічний опис ZXMP6A16DN8QTA Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.
Інші пропозиції ZXMP6A16DN8QTA за ціною від 37.20 грн до 143.58 грн
| Фото | Назва | Виробник | Інформація |
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ZXMP6A16DN8QTA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.9A 8SO Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Drain to Source Voltage (Vdss): 60V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 1820 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A16DN8QTA | Diodes Incorporated |
MOSFETs Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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| ZXMP6A16DN8QTA |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 2.9A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.45 грн |
| 10+ | 84.87 грн |
| 100+ | 57.41 грн |
| ZXMP6A16DN8QTA |
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Виробник: Diodes Incorporated
MOSFETs Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
MOSFETs Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.58 грн |
| 10+ | 90.58 грн |
| 100+ | 53.17 грн |
| 500+ | 39.80 грн |
| 1000+ | 37.20 грн |