ZXMP6A17DN8TA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 500+ | 37.38 грн |
| 1000+ | 32.87 грн |
| 1500+ | 31.28 грн |
| 2500+ | 27.68 грн |
| 3500+ | 26.68 грн |
| 5000+ | 26.08 грн |
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Технічний опис ZXMP6A17DN8TA Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.81W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції ZXMP6A17DN8TA за ціною від 45.70 грн до 112.35 грн
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ZXMP6A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 60V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 9193 шт: термін постачання 21-31 дні (днів) |
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| ZXMP6A17DN8TA |
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на замовлення 500 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| ZXMP6A17DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 2.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 9193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.35 грн |
| 10+ | 68.34 грн |
| 100+ | 45.70 грн |