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ZXMP6A17N8TC Diodes Incorporated

ZXMP6A17N8-95425.pdf
Виробник: Diodes Incorporated
MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A
на замовлення 3699 шт:
термін постачання 21-30 дні (днів)
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Технічний опис ZXMP6A17N8TC Diodes Incorporated

Description: MOSFET P-CH 60V 2.7A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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ZXMP6A17N8TC ZXMP6A17N8TC Diodes Incorporated ZXMP6A17N8.pdf Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ZXMP6A17N8TC ZXMP6A17N8TC Diodes Incorporated ZXMP6A17N8.pdf Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
ZXMP6A17N8TC ZXMP6A17N8.pdf
ZXMP6A17N8TC
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ZXMP6A17N8TC ZXMP6A17N8.pdf
ZXMP6A17N8TC
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.