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ISL78205AVEZ ISL78205AVEZ Renesas Electronics Corporation DS_20_isl78205.pdf Description: IC REG BUCK ADJ 2.5A 20HTSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP
Synchronous Rectifier: Both
Voltage - Output (Max): 38V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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ISL78205AVEZ-T ISL78205AVEZ-T Renesas Electronics Corporation DS_20_isl78205.pdf Description: IC REG BUCK ADJ 2.5A 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP
Synchronous Rectifier: Both
Voltage - Output (Max): 38V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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ISL78310ARAJZ ISL78310ARAJZ Renesas Electronics Corporation isl78310-datasheet Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
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ISL78310ARAJZ-T ISL78310ARAJZ-T Renesas Electronics Corporation isl78310-datasheet Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
6000+124.27 грн
Мінімальне замовлення: 6000
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ISL9000IRCJZ-T ISL9000IRCJZ-T Renesas Electronics Corporation isl9000-datasheet Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 32 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable, Power On Reset
PSRR: 90db ~ 50dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 52 µA
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BCR08AM-14A-A6#B00 BCR08AM-14A-A6#B00 Renesas Electronics Corporation bcr08am-14a-data-sheet Description: TRIAC SENS GATE 700V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 700 V
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R1LP5256ESP-5SI#B0 R1LP5256ESP-5SI#B0 Renesas Electronics Corporation r1lp5256e-series-datasheet Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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R1LP5256ESP-7SI#B0 R1LP5256ESP-7SI#B0 Renesas Electronics Corporation r1lp5256e-series-datasheet Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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R1LP5256ESP-7SR#B0 R1LP5256ESP-7SR#B0 Renesas Electronics Corporation R1LP5256E.pdf Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tray
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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R1LV0808ASB-5SI#B0 R1LV0808ASB-5SI#B0 Renesas Electronics Corporation r1lv0808asb-datasheet Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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R1LV0808ASB-7SI#B0 R1LV0808ASB-7SI#B0 Renesas Electronics Corporation r1lv0808asb-datasheet Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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R1LV0816ABG-5SI#B0 R1LV0816ABG-5SI#B0 Renesas Electronics Corporation r1lv0816abg-5si-7si-datasheet Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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R1LV0816ABG-7SI#B0 R1LV0816ABG-7SI#B0 Renesas Electronics Corporation r1lv0816abg-5si-7si-datasheet Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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R1LV0816ASB-5SI#B0 R1LV0816ASB-5SI#B0 Renesas Electronics Corporation r1lv0816asb-datasheet Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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R1LV5256ESP-7SR#B0 R1LV5256ESP-7SR#B0 Renesas Electronics Corporation r1lv5256e-series-datasheet Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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RJH60D0DPK-00#T0 RJH60D0DPK-00#T0 Renesas Electronics Corporation rjh60d0dpk-datasheet Description: IGBT TRENCH 600V 45A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
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RJH60D0DPM-00#T1 RJH60D0DPM-00#T1 Renesas Electronics Corporation rjh60d0dpm-datasheet Description: IGBT TRENCH 600V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 40 W
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RJH60D1DPP-M0#T2 RJH60D1DPP-M0#T2 Renesas Electronics Corporation rjh60d1dpp-m0-datasheet Description: IGBT TRENCH 600V 20A TO-220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/42ns
Switching Energy: 100µJ (on), 130µJ (off)
Test Condition: 300V, 10A, 5Ohm, 15V
Gate Charge: 13 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 30 W
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RJH60D2DPP-M0#T2 RJH60D2DPP-M0#T2 Renesas Electronics Corporation rjh60d2dpp-m0-datasheet Description: IGBT TRENCH 600V 25A TO-220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 32ns/85ns
Switching Energy: 100µJ (on), 160µJ (off)
Test Condition: 300V, 12A, 5Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 34 W
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RJH60D5DPK-00#T0 RJH60D5DPK-00#T0 Renesas Electronics Corporation rjh60d5dpk-datasheet Description: IGBT TRENCH 600V 75A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 400µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
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RJH60D5DPM-00#T1 RJH60D5DPM-00#T1 Renesas Electronics Corporation rjh60d5dpm-datasheet Description: IGBT TRENCH 600V 75A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 270µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
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RJH60D6DPK-00#T0 RJH60D6DPK-00#T0 Renesas Electronics Corporation rjh60d6dpk-datasheet Description: IGBT TRENCH 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 850µJ (on), 600µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
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RJH60D7DPK-00#T0 RJH60D7DPK-00#T0 Renesas Electronics Corporation rjh60d7dpk-datasheet Description: IGBT TRENCH 600V 90A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
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RJH60D7DPM-00#T1 RJH60D7DPM-00#T1 Renesas Electronics Corporation rjh60d7dpm-datasheet Description: IGBT TRENCH 600V 90A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 55 W
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RJH60F5DPQ-A0#T0 RJH60F5DPQ-A0#T0 Renesas Electronics Corporation rjh60f5dpq-a0-datasheet?language=en Description: IGBT TRENCH 600V 80A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 53ns/105ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260.4 W
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RJH60F6DPQ-A0#T0 RJH60F6DPQ-A0#T0 Renesas Electronics Corporation rjh60f6dpq-a0-datasheet?language=en Description: IGBT TRENCH 600V 85A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 58ns/131ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 297.6 W
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RJH60F7DPQ-A0#T0 RJH60F7DPQ-A0#T0 Renesas Electronics Corporation rjh60f7dpq-a0-datasheet?language=en Description: IGBT TRENCH 600V 90A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 63ns/142ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 328.9 W
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RKZ6.8Z4MFAKT#H1 RKZ6.8Z4MFAKT#H1 Renesas Electronics Corporation RKZ6.8Z4MFAKT.pdf Description: TVS DIODE 3.5VWM 5VSON
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: 5-VSON
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+6.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SJ687-ZK-E1-AY 2SJ687-ZK-E1-AY Renesas Electronics Corporation 2sj687-data-sheet?r=1335351 Description: MOSFET P-CH 20V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
на замовлення 3791 шт:
термін постачання 21-31 дні (днів)
2+258.01 грн
10+161.84 грн
100+112.64 грн
500+85.98 грн
1000+79.64 грн
Мінімальне замовлення: 2
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2SK3811-ZP-E1-AY 2SK3811-ZP-E1-AY Renesas Electronics Corporation 2sk3811-data-sheet Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
товару немає в наявності
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2SK3943-ZP-E1-AY 2SK3943-ZP-E1-AY Renesas Electronics Corporation 2sk3943-data-sheet Description: MOSFET N-CH 40V 82A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V
товару немає в наявності
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NP35N04YUG-E1-AY NP35N04YUG-E1-AY Renesas Electronics Corporation np35n04yug-data-sheet Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+119.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP60N03SUG-E1-AY NP60N03SUG-E1-AY Renesas Electronics Corporation np60n03sug-data-sheet Description: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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NP74N04YUG-E1-AY NP74N04YUG-E1-AY Renesas Electronics Corporation np74n04yug-data-sheet Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+164.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP75N04YUG-E1-AY NP75N04YUG-E1-AY Renesas Electronics Corporation np75n04yug-data-sheet Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+208.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP80N06PLG-E1B-AY NP80N06PLG-E1B-AY Renesas Electronics Corporation np80n06mlg-np80n06nlg-np80n06plg-data-sheet Description: MOSFET N-CH 60V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товару немає в наявності
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NP82N055PUG-E1-AY NP82N055PUG-E1-AY Renesas Electronics Corporation np82n055pug-data-sheet Description: MOSFET N-CH 55V 82A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
товару немає в наявності
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RJK0305DPB-02#J0 RJK0305DPB-02#J0 Renesas Electronics Corporation Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
товару немає в наявності
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RJK0451DPB-00#J5 RJK0451DPB-00#J5 Renesas Electronics Corporation rjk0451dpb-datasheet Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
на замовлення 1754 шт:
термін постачання 21-31 дні (днів)
2+193.71 грн
10+120.41 грн
100+82.44 грн
500+62.13 грн
1000+57.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK0452DPB-00#J5 RJK0452DPB-00#J5 Renesas Electronics Corporation rjk0452dpb-datasheet Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
2+234.20 грн
10+146.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK0454DPB-00#J5 RJK0454DPB-00#J5 Renesas Electronics Corporation rjk0454dpb-datasheet Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
2+258.01 грн
10+161.54 грн
100+112.40 грн
500+85.79 грн
1000+79.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK0455DPB-00#J5 RJK0455DPB-00#J5 Renesas Electronics Corporation rjk0455dpb-datasheet Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
на замовлення 7490 шт:
термін постачання 21-31 дні (днів)
2+192.92 грн
10+154.66 грн
100+123.07 грн
500+97.73 грн
1000+82.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK0456DPB-00#J5 RJK0456DPB-00#J5 Renesas Electronics Corporation rjk0456dpb-datasheet Description: MOSFET N-CH 40V 50A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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RJK0651DPB-00#J5 RJK0651DPB-00#J5 Renesas Electronics Corporation rjk0651dpb-datasheet Description: MOSFET N-CH 60V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 10 V
на замовлення 17095 шт:
термін постачання 21-31 дні (днів)
3+114.32 грн
10+82.95 грн
100+65.75 грн
500+57.54 грн
1000+53.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RJK0852DPB-00#J5 RJK0852DPB-00#J5 Renesas Electronics Corporation rjk0852dpb-datasheet Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
на замовлення 3316 шт:
термін постачання 21-31 дні (днів)
2+234.20 грн
10+146.71 грн
100+102.07 грн
500+82.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK0853DPB-00#J5 RJK0853DPB-00#J5 Renesas Electronics Corporation rjk0853dpb-datasheet?r=1342566 Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
2+208.79 грн
10+152.21 грн
100+117.00 грн
500+89.78 грн
1000+83.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK1052DPB-00#J5 RJK1052DPB-00#J5 Renesas Electronics Corporation rjk1052dpb-datasheet Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
на замовлення 4073 шт:
термін постачання 21-31 дні (днів)
2+185.77 грн
10+148.77 грн
100+118.43 грн
500+94.04 грн
1000+79.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK1055DPB-00#J5 RJK1055DPB-00#J5 Renesas Electronics Corporation rjk1055dpb-datasheet Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
на замовлення 7335 шт:
термін постачання 21-31 дні (днів)
2+273.10 грн
10+172.16 грн
100+120.21 грн
500+92.00 грн
1000+85.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK1056DPB-00#J5 RJK1056DPB-00#J5 Renesas Electronics Corporation rjk1056dpb-datasheet Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
на замовлення 4755 шт:
термін постачання 21-31 дні (днів)
2+278.66 грн
10+175.53 грн
100+122.71 грн
500+94.00 грн
1000+87.20 грн
Мінімальне замовлення: 2
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RJK5033DPD-00#J2 RJK5033DPD-00#J2 Renesas Electronics Corporation rjk5033dpd-datasheet Description: MOSFET N-CH 500V 6A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2+223.08 грн
Мінімальне замовлення: 2
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RJK6025DPD-00#J2 RJK6025DPD-00#J2 Renesas Electronics Corporation rjk6025dpd-datasheet?language=en Description: MOSFET N-CH 600V 1A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
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BCR5AS-12A-T13#B00 BCR5AS-12A-T13#B00 Renesas Electronics Corporation bcr5as-12a-data-sheet Description: TRIAC 600V 5A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: MP-3A
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
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ISL95831HRTZ ISL95831HRTZ Renesas Electronics Corporation isl95831-data-short Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
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ISL9021AIRUWZ-T7A ISL9021AIRUWZ-T7A Renesas Electronics Corporation isl9021a-datasheet Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
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ISL95831HRTZ-T ISL95831HRTZ-T Renesas Electronics Corporation isl95831-data-short Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
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ISL9021AIRUFZ-T7A ISL9021AIRUFZ-T7A Renesas Electronics Corporation isl9021a-datasheet Description: IC REG LINEAR 2.5V 250MA 6UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
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ISL95831IRTZ ISL95831IRTZ Renesas Electronics Corporation isl95831-data-short Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+867.72 грн
10+754.86 грн
50+719.80 грн
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ISL61863IIRZ ISL61863IIRZ Renesas Electronics Corporation isl6186-datasheet Description: IC HOT SWAP CTRLR USB 10DFN
Packaging: Tube
Features: Fault Timeout, Latched Fault, Thermal Limit, Turn On Voltage, UVLO
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Applications: USB
Internal Switch(s): Yes
Current - Output (Max): 3.6A
Supplier Device Package: 10-DFN (3x3)
Number of Channels: 2
Current - Supply: 57 µA
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TW8831-LB1-CR TW8831-LB1-CR Renesas Electronics Corporation tw8831-data-short Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Voltage - Supply: 1.8V, 3.3V
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: Serial
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ISL97687IRTZ ISL97687IRTZ Renesas Electronics Corporation isl97687-datasheet Description: IC LED DRVR CTRL PWM 160MA 28QFN
Packaging: Tube
Package / Case: 28-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 1.2MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight
Current - Output / Channel: 160mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 28-TQFN (5x5)
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 32V
Part Status: Active
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ISL78205AVEZ DS_20_isl78205.pdf
ISL78205AVEZ
Виробник: Renesas Electronics Corporation
Description: IC REG BUCK ADJ 2.5A 20HTSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP
Synchronous Rectifier: Both
Voltage - Output (Max): 38V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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ISL78205AVEZ-T DS_20_isl78205.pdf
ISL78205AVEZ-T
Виробник: Renesas Electronics Corporation
Description: IC REG BUCK ADJ 2.5A 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP
Synchronous Rectifier: Both
Voltage - Output (Max): 38V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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ISL78310ARAJZ isl78310-datasheet
ISL78310ARAJZ
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
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ISL78310ARAJZ-T isl78310-datasheet
ISL78310ARAJZ-T
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+124.27 грн
Мінімальне замовлення: 6000
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ISL9000IRCJZ-T isl9000-datasheet
ISL9000IRCJZ-T
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 32 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable, Power On Reset
PSRR: 90db ~ 50dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 52 µA
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BCR08AM-14A-A6#B00 bcr08am-14a-data-sheet
BCR08AM-14A-A6#B00
Виробник: Renesas Electronics Corporation
Description: TRIAC SENS GATE 700V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 700 V
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R1LP5256ESP-5SI#B0 r1lp5256e-series-datasheet
R1LP5256ESP-5SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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R1LP5256ESP-7SI#B0 r1lp5256e-series-datasheet
R1LP5256ESP-7SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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R1LP5256ESP-7SR#B0 R1LP5256E.pdf
R1LP5256ESP-7SR#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tray
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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R1LV0808ASB-5SI#B0 r1lv0808asb-datasheet
R1LV0808ASB-5SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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R1LV0808ASB-7SI#B0 r1lv0808asb-datasheet
R1LV0808ASB-7SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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R1LV0816ABG-5SI#B0 r1lv0816abg-5si-7si-datasheet
R1LV0816ABG-5SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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R1LV0816ABG-7SI#B0 r1lv0816abg-5si-7si-datasheet
R1LV0816ABG-7SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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R1LV0816ASB-5SI#B0 r1lv0816asb-datasheet
R1LV0816ASB-5SI#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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R1LV5256ESP-7SR#B0 r1lv5256e-series-datasheet
R1LV5256ESP-7SR#B0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 256KBIT PARALLEL 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.330", 8.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 28-SOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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RJH60D0DPK-00#T0 rjh60d0dpk-datasheet
RJH60D0DPK-00#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 45A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
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RJH60D0DPM-00#T1 rjh60d0dpm-datasheet
RJH60D0DPM-00#T1
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 40 W
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RJH60D1DPP-M0#T2 rjh60d1dpp-m0-datasheet
RJH60D1DPP-M0#T2
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 20A TO-220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/42ns
Switching Energy: 100µJ (on), 130µJ (off)
Test Condition: 300V, 10A, 5Ohm, 15V
Gate Charge: 13 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 30 W
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RJH60D2DPP-M0#T2 rjh60d2dpp-m0-datasheet
RJH60D2DPP-M0#T2
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 25A TO-220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 32ns/85ns
Switching Energy: 100µJ (on), 160µJ (off)
Test Condition: 300V, 12A, 5Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 34 W
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RJH60D5DPK-00#T0 rjh60d5dpk-datasheet
RJH60D5DPK-00#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 75A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 400µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
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RJH60D5DPM-00#T1 rjh60d5dpm-datasheet
RJH60D5DPM-00#T1
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 75A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 270µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
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RJH60D6DPK-00#T0 rjh60d6dpk-datasheet
RJH60D6DPK-00#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 850µJ (on), 600µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
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RJH60D7DPK-00#T0 rjh60d7dpk-datasheet
RJH60D7DPK-00#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 90A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
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RJH60D7DPM-00#T1 rjh60d7dpm-datasheet
RJH60D7DPM-00#T1
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 90A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 55 W
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RJH60F5DPQ-A0#T0 rjh60f5dpq-a0-datasheet?language=en
RJH60F5DPQ-A0#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 80A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 53ns/105ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260.4 W
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RJH60F6DPQ-A0#T0 rjh60f6dpq-a0-datasheet?language=en
RJH60F6DPQ-A0#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 85A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 58ns/131ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 297.6 W
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RJH60F7DPQ-A0#T0 rjh60f7dpq-a0-datasheet?language=en
RJH60F7DPQ-A0#T0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 90A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 63ns/142ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 328.9 W
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RKZ6.8Z4MFAKT#H1 RKZ6.8Z4MFAKT.pdf
RKZ6.8Z4MFAKT#H1
Виробник: Renesas Electronics Corporation
Description: TVS DIODE 3.5VWM 5VSON
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: 5-VSON
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.89 грн
Мінімальне замовлення: 3000
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2SJ687-ZK-E1-AY 2sj687-data-sheet?r=1335351
2SJ687-ZK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
на замовлення 3791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+258.01 грн
10+161.84 грн
100+112.64 грн
500+85.98 грн
1000+79.64 грн
Мінімальне замовлення: 2
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2SK3811-ZP-E1-AY 2sk3811-data-sheet
2SK3811-ZP-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
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2SK3943-ZP-E1-AY 2sk3943-data-sheet
2SK3943-ZP-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 82A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 41A, 10V
Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V
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NP35N04YUG-E1-AY np35n04yug-data-sheet
NP35N04YUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.08 грн
Мінімальне замовлення: 3
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NP60N03SUG-E1-AY np60n03sug-data-sheet
NP60N03SUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Qualification: AEC-Q101
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NP74N04YUG-E1-AY np74n04yug-data-sheet
NP74N04YUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+164.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP75N04YUG-E1-AY np75n04yug-data-sheet
NP75N04YUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP80N06PLG-E1B-AY np80n06mlg-np80n06nlg-np80n06plg-data-sheet
NP80N06PLG-E1B-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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NP82N055PUG-E1-AY np82n055pug-data-sheet
NP82N055PUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 82A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
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RJK0305DPB-02#J0
RJK0305DPB-02#J0
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
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RJK0451DPB-00#J5 rjk0451dpb-datasheet
RJK0451DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
на замовлення 1754 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.71 грн
10+120.41 грн
100+82.44 грн
500+62.13 грн
1000+57.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RJK0452DPB-00#J5 rjk0452dpb-datasheet
RJK0452DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.20 грн
10+146.71 грн
Мінімальне замовлення: 2
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RJK0454DPB-00#J5 rjk0454dpb-datasheet
RJK0454DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+258.01 грн
10+161.54 грн
100+112.40 грн
500+85.79 грн
1000+79.47 грн
Мінімальне замовлення: 2
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RJK0455DPB-00#J5 rjk0455dpb-datasheet
RJK0455DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
на замовлення 7490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.92 грн
10+154.66 грн
100+123.07 грн
500+97.73 грн
1000+82.92 грн
Мінімальне замовлення: 2
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RJK0456DPB-00#J5 rjk0456dpb-datasheet
RJK0456DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 50A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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RJK0651DPB-00#J5 rjk0651dpb-datasheet
RJK0651DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 10 V
на замовлення 17095 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.32 грн
10+82.95 грн
100+65.75 грн
500+57.54 грн
1000+53.01 грн
Мінімальне замовлення: 3
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RJK0852DPB-00#J5 rjk0852dpb-datasheet
RJK0852DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
на замовлення 3316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.20 грн
10+146.71 грн
100+102.07 грн
500+82.22 грн
Мінімальне замовлення: 2
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RJK0853DPB-00#J5 rjk0853dpb-datasheet?r=1342566
RJK0853DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.79 грн
10+152.21 грн
100+117.00 грн
500+89.78 грн
1000+83.34 грн
Мінімальне замовлення: 2
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RJK1052DPB-00#J5 rjk1052dpb-datasheet
RJK1052DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
на замовлення 4073 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.77 грн
10+148.77 грн
100+118.43 грн
500+94.04 грн
1000+79.79 грн
Мінімальне замовлення: 2
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RJK1055DPB-00#J5 rjk1055dpb-datasheet
RJK1055DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
на замовлення 7335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.10 грн
10+172.16 грн
100+120.21 грн
500+92.00 грн
1000+85.32 грн
Мінімальне замовлення: 2
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RJK1056DPB-00#J5 rjk1056dpb-datasheet
RJK1056DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
на замовлення 4755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.66 грн
10+175.53 грн
100+122.71 грн
500+94.00 грн
1000+87.20 грн
Мінімальне замовлення: 2
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RJK5033DPD-00#J2 rjk5033dpd-datasheet
RJK5033DPD-00#J2
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 6A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.08 грн
Мінімальне замовлення: 2
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RJK6025DPD-00#J2 rjk6025dpd-datasheet?language=en
RJK6025DPD-00#J2
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
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BCR5AS-12A-T13#B00 bcr5as-12a-data-sheet
BCR5AS-12A-T13#B00
Виробник: Renesas Electronics Corporation
Description: TRIAC 600V 5A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: MP-3A
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
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ISL95831HRTZ isl95831-data-short
ISL95831HRTZ
Виробник: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
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ISL9021AIRUWZ-T7A isl9021a-datasheet
ISL9021AIRUWZ-T7A
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
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ISL95831HRTZ-T isl95831-data-short
ISL95831HRTZ-T
Виробник: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
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ISL9021AIRUFZ-T7A isl9021a-datasheet
ISL9021AIRUFZ-T7A
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR 2.5V 250MA 6UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
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ISL95831IRTZ isl95831-data-short
ISL95831IRTZ
Виробник: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+867.72 грн
10+754.86 грн
50+719.80 грн
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ISL61863IIRZ isl6186-datasheet
ISL61863IIRZ
Виробник: Renesas Electronics Corporation
Description: IC HOT SWAP CTRLR USB 10DFN
Packaging: Tube
Features: Fault Timeout, Latched Fault, Thermal Limit, Turn On Voltage, UVLO
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Applications: USB
Internal Switch(s): Yes
Current - Output (Max): 3.6A
Supplier Device Package: 10-DFN (3x3)
Number of Channels: 2
Current - Supply: 57 µA
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TW8831-LB1-CR tw8831-data-short
TW8831-LB1-CR
Виробник: Renesas Electronics Corporation
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Voltage - Supply: 1.8V, 3.3V
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: Serial
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ISL97687IRTZ isl97687-datasheet
ISL97687IRTZ
Виробник: Renesas Electronics Corporation
Description: IC LED DRVR CTRL PWM 160MA 28QFN
Packaging: Tube
Package / Case: 28-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 1.2MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight
Current - Output / Channel: 160mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 28-TQFN (5x5)
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 32V
Part Status: Active
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