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ISL23418UFUZ ISL23418UFUZ Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
3+115.83 грн
10+100.01 грн
25+94.33 грн
100+75.42 грн
250+70.82 грн
500+61.97 грн
1000+50.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISL23418UFUZ-TK ISL23418UFUZ-TK Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)
4000+55.35 грн
5000+51.33 грн
10000+49.35 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ISL21010CFH333Z-TK ISL21010CFH333Z-TK Renesas Electronics Corporation isl21010-datasheet Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.4V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 95µVp-p
Noise - 10Hz to 10kHz: 40µVrms
Current - Output: 25 mA
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
1000+68.01 грн
2000+63.73 грн
3000+62.85 грн
5000+58.06 грн
7000+57.53 грн
10000+57.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ISL23318TFUZ ISL23318TFUZ Renesas Electronics Corporation isl23318-datasheet Description: IC DGT POT 100KOHM 128TAP 10MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
3+105.59 грн
10+74.28 грн
25+67.50 грн
100+56.28 грн
250+52.92 грн
500+50.89 грн
1000+48.41 грн
3000+46.39 грн
5000+45.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISL23318TFUZ-TK ISL23318TFUZ-TK Renesas Electronics Corporation isl23318-datasheet Description: IC DGT POT 100KOHM 128TAP 10MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
1000+54.47 грн
2000+50.98 грн
3000+50.25 грн
5000+46.40 грн
7000+45.95 грн
10000+45.52 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ISL23328WFVZ ISL23328WFVZ Renesas Electronics Corporation isl23328-datasheet Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
2+174.93 грн
10+151.76 грн
25+143.20 грн
100+114.48 грн
250+107.50 грн
500+94.06 грн
1000+76.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISL23428WFVZ ISL23428WFVZ Renesas Electronics Corporation isl23428-datasheet Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
3+130.80 грн
10+113.13 грн
25+106.75 грн
100+85.36 грн
250+80.15 грн
960+70.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISL21010CFH320Z-TK ISL21010CFH320Z-TK Renesas Electronics Corporation isl21010-datasheet Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.2V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 58µVp-p
Noise - 10Hz to 10kHz: 26µVrms
Current - Output: 25 mA
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
1000+68.01 грн
2000+63.73 грн
3000+62.85 грн
5000+58.06 грн
7000+57.53 грн
10000+57.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ISL21010CFH330Z-TK ISL21010CFH330Z-TK Renesas Electronics Corporation isl21010-datasheet Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.1V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 86µVp-p
Noise - 10Hz to 10kHz: 36µVrms
Current - Output: 25 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+68.01 грн
2000+63.73 грн
3000+62.85 грн
5000+58.06 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ISL9021AIRUWZ-T ISL9021AIRUWZ-T Renesas Electronics Corporation isl9021a-datasheet Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
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ISL9021AIRUWZ-T ISL9021AIRUWZ-T Renesas Electronics Corporation isl9021a-datasheet Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
на замовлення 646 шт:
термін постачання 21-31 дні (днів)
4+94.56 грн
10+66.54 грн
25+60.31 грн
100+50.18 грн
250+47.11 грн
500+45.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
RJK0305DPB-02#J0 RJK0305DPB-02#J0 Renesas Electronics Corporation Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
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RJK0393DPA-00#J5A RJK0393DPA-00#J5A Renesas Electronics Corporation rjk0393dpa-datasheet?language Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 10 V
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RJK0451DPB-00#J5 RJK0451DPB-00#J5 Renesas Electronics Corporation rjk0451dpb-datasheet Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
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RJK0452DPB-00#J5 RJK0452DPB-00#J5 Renesas Electronics Corporation rjk0452dpb-datasheet Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
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RJK0454DPB-00#J5 RJK0454DPB-00#J5 Renesas Electronics Corporation rjk0454dpb-datasheet Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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RJK0455DPB-00#J5 RJK0455DPB-00#J5 Renesas Electronics Corporation rjk0455dpb-datasheet Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+80.51 грн
Мінімальне замовлення: 2500
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RJK0656DPB-00#J5 RJK0656DPB-00#J5 Renesas Electronics Corporation rjk0656dpb-datasheet Description: MOSFET N-CH 60V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
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RJK0852DPB-00#J5 RJK0852DPB-00#J5 Renesas Electronics Corporation rjk0852dpb-datasheet Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+72.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RJK0853DPB-00#J5 RJK0853DPB-00#J5 Renesas Electronics Corporation rjk0853dpb-datasheet?r=1342566 Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+85.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RJK1052DPB-00#J5 RJK1052DPB-00#J5 Renesas Electronics Corporation rjk1052dpb-datasheet Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
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RJK1055DPB-00#J5 RJK1055DPB-00#J5 Renesas Electronics Corporation rjk1055dpb-datasheet Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
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RJK1056DPB-00#J5 RJK1056DPB-00#J5 Renesas Electronics Corporation rjk1056dpb-datasheet Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
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2SJ673-AZ Renesas Electronics Corporation 2sj673-data-sheet Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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2SJ687-ZK-E1-AY 2SJ687-ZK-E1-AY Renesas Electronics Corporation 2sj687-data-sheet?r=1335351 Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
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2SK3481-AZ 2SK3481-AZ Renesas Electronics Corporation 2sk3481-data-sheet Description: MOSFET N-CH 100V 30A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 1.5W (Ta), 56W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
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2SK3482-AZ 2SK3482-AZ Renesas Electronics Corporation 2sk3482-data-sheet Description: MOSFET N-CH 100V 36A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 50W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
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2SK3484-AZ 2SK3484-AZ Renesas Electronics Corporation 2sk3484-data-sheet Description: MOSFET N-CH 100V 16A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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2SK3793-AZ Renesas Electronics Corporation 2sk3793-data-sheet Description: MOSFET N-CH 100V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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2SK3811-ZP-E1-AY 2SK3811-ZP-E1-AY Renesas Electronics Corporation 2sk3811-data-sheet Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
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2SK3813-AZ 2SK3813-AZ Renesas Electronics Corporation 2sk3813-data-sheet Description: MOSFET N-CH 40V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
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NP110N03PUG-E1-AY NP110N03PUG-E1-AY Renesas Electronics Corporation np110n03pug-data-sheet Description: MOSFET N-CH 30V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
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NP110N04PUG-E1-AY NP110N04PUG-E1-AY Renesas Electronics Corporation np110n04pug-data-sheet Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V
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NP160N04TDG-E1-AY NP160N04TDG-E1-AY Renesas Electronics Corporation np160n04tdg-data-sheet Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
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NP160N04TUG-E1-AY NP160N04TUG-E1-AY Renesas Electronics Corporation np160n04tug-data-sheet Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
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NP160N04TUJ-E1-AY NP160N04TUJ-E1-AY Renesas Electronics Corporation np160n04tuj-data-sheet Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP180N04TUJ-E1-AY NP180N04TUJ-E1-AY Renesas Electronics Corporation np180n04tuj-data-sheet Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
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NP180N055TUJ-E1-AY NP180N055TUJ-E1-AY Renesas Electronics Corporation np180n055tuj-data-sheet Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
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NP22N055SHE-E1-AY NP22N055SHE-E1-AY Renesas Electronics Corporation NP22N055xLE_4-1-10.pdf Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
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NP22N055SLE-E1-AY NP22N055SLE-E1-AY Renesas Electronics Corporation NP22N055xLE_4-1-10.pdf Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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NP23N06YDG-E1-AY NP23N06YDG-E1-AY Renesas Electronics Corporation np23n06ydg-data-sheet Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+38.85 грн
5000+34.91 грн
Мінімальне замовлення: 2500
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NP32N055SLE-E1-AY NP32N055SLE-E1-AY Renesas Electronics Corporation np32n055hlenp32n055ilenp32n055sle-data-sheet?language=en&r=499516 Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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NP35N04YUG-E1-AY NP35N04YUG-E1-AY Renesas Electronics Corporation np35n04yug-data-sheet Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+53.24 грн
5000+49.34 грн
Мінімальне замовлення: 2500
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NP55N03SUG-E1-AY NP55N03SUG-E1-AY Renesas Electronics Corporation np55n03sug-data-sheet Description: MOSFET N-CH 30V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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NP55N055SDG-E1-AY NP55N055SDG-E1-AY Renesas Electronics Corporation np55n055sdg-data-sheet Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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NP55N055SUG-E1-AY NP55N055SUG-E1-AY Renesas Electronics Corporation np55n055sug-data-sheet Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
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NP60N03KUG-E1-AY NP60N03KUG-E1-AY Renesas Electronics Corporation np60n03kug-data-sheet Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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NP60N03SUG-E1-AY NP60N03SUG-E1-AY Renesas Electronics Corporation np60n03sug-data-sheet Description: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP60N055KUG-E1-AY NP60N055KUG-E1-AY Renesas Electronics Corporation np60n055kug-data-sheet Description: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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NP70N10KUF-E1-AY NP70N10KUF-E1-AY Renesas Electronics Corporation np70n10kuf-data-sheet Description: MOSFET N-CH 100V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 35A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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NP74N04YUG-E1-AY NP74N04YUG-E1-AY Renesas Electronics Corporation np74n04yug-data-sheet Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+51.51 грн
Мінімальне замовлення: 2500
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NP75N04YUG-E1-AY NP75N04YUG-E1-AY Renesas Electronics Corporation np75n04yug-data-sheet Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+69.68 грн
Мінімальне замовлення: 2500
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NP80N06PLG-E1B-AY NP80N06PLG-E1B-AY Renesas Electronics Corporation np80n06mlg-np80n06nlg-np80n06plg-data-sheet Description: MOSFET N-CH 60V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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NP82N055PUG-E1-AY NP82N055PUG-E1-AY Renesas Electronics Corporation np82n055pug-data-sheet Description: MOSFET N-CH 55V 82A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
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NP90N04MUG-S18-AY NP90N04MUG-S18-AY Renesas Electronics Corporation np90n04mug-data-sheet Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V
Power Dissipation (Max): 1.8W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
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NP90N06VLG-E1-AY NP90N06VLG-E1-AY Renesas Electronics Corporation np90n06vlg-data-sheet Description: MOSFET N-CH 60V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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RJK5033DPD-00#J2 RJK5033DPD-00#J2 Renesas Electronics Corporation rjk5033dpd-datasheet Description: MOSFET N-CH 500V 6A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+63.29 грн
Мінімальне замовлення: 3000
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RJK6025DPD-00#J2 RJK6025DPD-00#J2 Renesas Electronics Corporation rjk6025dpd-datasheet?language=en Description: MOSFET N-CH 600V 1A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
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BCR08AM-12A#B00 BCR08AM-12A#B00 Renesas Electronics Corporation bcr08am-12a-data-sheet Description: TRIAC SENS GATE 600V 0.8A TO92
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
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BCR25RM-12LB#B00 BCR25RM-12LB#B00 Renesas Electronics Corporation bcr25rm-12lb-datasheet Description: TRIAC 600V 25A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-3PFM
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+449.14 грн
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ISL23418UFUZ isl23418-datasheet
ISL23418UFUZ
Виробник: Renesas Electronics Corporation
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.83 грн
10+100.01 грн
25+94.33 грн
100+75.42 грн
250+70.82 грн
500+61.97 грн
1000+50.50 грн
Мінімальне замовлення: 3
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ISL23418UFUZ-TK isl23418-datasheet
ISL23418UFUZ-TK
Виробник: Renesas Electronics Corporation
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+55.35 грн
5000+51.33 грн
10000+49.35 грн
Мінімальне замовлення: 4000
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ISL21010CFH333Z-TK isl21010-datasheet
ISL21010CFH333Z-TK
Виробник: Renesas Electronics Corporation
Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.4V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 95µVp-p
Noise - 10Hz to 10kHz: 40µVrms
Current - Output: 25 mA
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+68.01 грн
2000+63.73 грн
3000+62.85 грн
5000+58.06 грн
7000+57.53 грн
10000+57.01 грн
Мінімальне замовлення: 1000
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ISL23318TFUZ isl23318-datasheet
ISL23318TFUZ
Виробник: Renesas Electronics Corporation
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+105.59 грн
10+74.28 грн
25+67.50 грн
100+56.28 грн
250+52.92 грн
500+50.89 грн
1000+48.41 грн
3000+46.39 грн
5000+45.64 грн
Мінімальне замовлення: 3
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ISL23318TFUZ-TK isl23318-datasheet
ISL23318TFUZ-TK
Виробник: Renesas Electronics Corporation
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+54.47 грн
2000+50.98 грн
3000+50.25 грн
5000+46.40 грн
7000+45.95 грн
10000+45.52 грн
Мінімальне замовлення: 1000
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ISL23328WFVZ isl23328-datasheet
ISL23328WFVZ
Виробник: Renesas Electronics Corporation
Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.93 грн
10+151.76 грн
25+143.20 грн
100+114.48 грн
250+107.50 грн
500+94.06 грн
1000+76.66 грн
Мінімальне замовлення: 2
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ISL23428WFVZ isl23428-datasheet
ISL23428WFVZ
Виробник: Renesas Electronics Corporation
Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.80 грн
10+113.13 грн
25+106.75 грн
100+85.36 грн
250+80.15 грн
960+70.55 грн
Мінімальне замовлення: 3
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ISL21010CFH320Z-TK isl21010-datasheet
ISL21010CFH320Z-TK
Виробник: Renesas Electronics Corporation
Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.2V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 58µVp-p
Noise - 10Hz to 10kHz: 26µVrms
Current - Output: 25 mA
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+68.01 грн
2000+63.73 грн
3000+62.85 грн
5000+58.06 грн
7000+57.53 грн
10000+57.01 грн
Мінімальне замовлення: 1000
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ISL21010CFH330Z-TK isl21010-datasheet
ISL21010CFH330Z-TK
Виробник: Renesas Electronics Corporation
Description: IC VREF SERIES 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.1V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 86µVp-p
Noise - 10Hz to 10kHz: 36µVrms
Current - Output: 25 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+68.01 грн
2000+63.73 грн
3000+62.85 грн
5000+58.06 грн
Мінімальне замовлення: 1000
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ISL9021AIRUWZ-T isl9021a-datasheet
ISL9021AIRUWZ-T
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
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ISL9021AIRUWZ-T isl9021a-datasheet
ISL9021AIRUWZ-T
Виробник: Renesas Electronics Corporation
Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
на замовлення 646 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.56 грн
10+66.54 грн
25+60.31 грн
100+50.18 грн
250+47.11 грн
500+45.26 грн
Мінімальне замовлення: 4
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RJK0305DPB-02#J0
RJK0305DPB-02#J0
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
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RJK0393DPA-00#J5A rjk0393dpa-datasheet?language
RJK0393DPA-00#J5A
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 10 V
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RJK0451DPB-00#J5 rjk0451dpb-datasheet
RJK0451DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
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RJK0452DPB-00#J5 rjk0452dpb-datasheet
RJK0452DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
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RJK0454DPB-00#J5 rjk0454dpb-datasheet
RJK0454DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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RJK0455DPB-00#J5 rjk0455dpb-datasheet
RJK0455DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+80.51 грн
Мінімальне замовлення: 2500
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RJK0656DPB-00#J5 rjk0656dpb-datasheet
RJK0656DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
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RJK0852DPB-00#J5 rjk0852dpb-datasheet
RJK0852DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+72.22 грн
Мінімальне замовлення: 2500
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RJK0853DPB-00#J5 rjk0853dpb-datasheet?r=1342566
RJK0853DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+85.75 грн
Мінімальне замовлення: 2500
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RJK1052DPB-00#J5 rjk1052dpb-datasheet
RJK1052DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
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RJK1055DPB-00#J5 rjk1055dpb-datasheet
RJK1055DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
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RJK1056DPB-00#J5 rjk1056dpb-datasheet
RJK1056DPB-00#J5
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
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2SJ673-AZ 2sj673-data-sheet
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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2SJ687-ZK-E1-AY 2sj687-data-sheet?r=1335351
2SJ687-ZK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
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2SK3481-AZ 2sk3481-data-sheet
2SK3481-AZ
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 30A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 1.5W (Ta), 56W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
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2SK3482-AZ 2sk3482-data-sheet
2SK3482-AZ
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 36A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 50W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
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2SK3484-AZ 2sk3484-data-sheet
2SK3484-AZ
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 16A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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2SK3793-AZ 2sk3793-data-sheet
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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2SK3811-ZP-E1-AY 2sk3811-data-sheet
2SK3811-ZP-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
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2SK3813-AZ 2sk3813-data-sheet
2SK3813-AZ
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
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NP110N03PUG-E1-AY np110n03pug-data-sheet
NP110N03PUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
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NP110N04PUG-E1-AY np110n04pug-data-sheet
NP110N04PUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V
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NP160N04TDG-E1-AY np160n04tdg-data-sheet
NP160N04TDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
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NP160N04TUG-E1-AY np160n04tug-data-sheet
NP160N04TUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
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NP160N04TUJ-E1-AY np160n04tuj-data-sheet
NP160N04TUJ-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP180N04TUJ-E1-AY np180n04tuj-data-sheet
NP180N04TUJ-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
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NP180N055TUJ-E1-AY np180n055tuj-data-sheet
NP180N055TUJ-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
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NP22N055SHE-E1-AY NP22N055xLE_4-1-10.pdf
NP22N055SHE-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
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NP22N055SLE-E1-AY NP22N055xLE_4-1-10.pdf
NP22N055SLE-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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NP23N06YDG-E1-AY np23n06ydg-data-sheet
NP23N06YDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+38.85 грн
5000+34.91 грн
Мінімальне замовлення: 2500
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NP32N055SLE-E1-AY np32n055hlenp32n055ilenp32n055sle-data-sheet?language=en&r=499516
NP32N055SLE-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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NP35N04YUG-E1-AY np35n04yug-data-sheet
NP35N04YUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+53.24 грн
5000+49.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP55N03SUG-E1-AY np55n03sug-data-sheet
NP55N03SUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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NP55N055SDG-E1-AY np55n055sdg-data-sheet
NP55N055SDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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NP55N055SUG-E1-AY np55n055sug-data-sheet
NP55N055SUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
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NP60N03KUG-E1-AY np60n03kug-data-sheet
NP60N03KUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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NP60N03SUG-E1-AY np60n03sug-data-sheet
NP60N03SUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP60N055KUG-E1-AY np60n055kug-data-sheet
NP60N055KUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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NP70N10KUF-E1-AY np70n10kuf-data-sheet
NP70N10KUF-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 35A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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NP74N04YUG-E1-AY np74n04yug-data-sheet
NP74N04YUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP75N04YUG-E1-AY np75n04yug-data-sheet
NP75N04YUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+69.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP80N06PLG-E1B-AY np80n06mlg-np80n06nlg-np80n06plg-data-sheet
NP80N06PLG-E1B-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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NP82N055PUG-E1-AY np82n055pug-data-sheet
NP82N055PUG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 82A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
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NP90N04MUG-S18-AY np90n04mug-data-sheet
NP90N04MUG-S18-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V
Power Dissipation (Max): 1.8W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
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NP90N06VLG-E1-AY np90n06vlg-data-sheet
NP90N06VLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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RJK5033DPD-00#J2 rjk5033dpd-datasheet
RJK5033DPD-00#J2
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 6A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+63.29 грн
Мінімальне замовлення: 3000
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RJK6025DPD-00#J2 rjk6025dpd-datasheet?language=en
RJK6025DPD-00#J2
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
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BCR08AM-12A#B00 bcr08am-12a-data-sheet
BCR08AM-12A#B00
Виробник: Renesas Electronics Corporation
Description: TRIAC SENS GATE 600V 0.8A TO92
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
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BCR25RM-12LB#B00 bcr25rm-12lb-datasheet
BCR25RM-12LB#B00
Виробник: Renesas Electronics Corporation
Description: TRIAC 600V 25A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-3PFM
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+449.14 грн
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