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R5F52318BDFM#30 R5F52318BDFM#30 Renesas Electronics Corporation rx230-group-rx231-group-datasheet-rev120 Description: IC MCU 32BIT 512KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 54MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: RXv2
Data Converters: A/D 12x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, SCI, SD/SDIO, SPI, SSI, USB OTG
Peripherals: Capacitive Touch, DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 43
DigiKey Programmable: Not Verified
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+688.15 грн
10+458.81 грн
25+406.07 грн
80+333.35 грн
230+301.13 грн
В кошику  од. на суму  грн.
R5F52318BDFP#30 R5F52318BDFP#30 Renesas Electronics Corporation rx230-group-rx231-group-datasheet-rev120 Description: IC MCU 32BIT 512KB FLSH 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 54MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: RXv2
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, IrDA, SCI, SD/SDIO, SPI, SSI, USB OTG
Peripherals: Capacitive Touch, DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)
1+488.02 грн
10+363.79 грн
25+337.16 грн
90+296.25 грн
В кошику  од. на суму  грн.
R5F52318BDLA#20 R5F52318BDLA#20 Renesas Electronics Corporation rx230-group-rx231-group-datasheet-rev120 Description: IC MCU 32BIT 512KB FLSH 100TFLGA
Packaging: Tray
Package / Case: 100-TFLGA
Mounting Type: Surface Mount
Speed: 54MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: RXv2
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, IrDA, SCI, SD/SDIO, SPI, SSI, USB OTG
Peripherals: Capacitive Touch, DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-TFLGA (5.5x5.5)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
1+506.07 грн
10+338.28 грн
25+299.79 грн
80+277.96 грн
В кошику  од. на суму  грн.
R5F10NLEDFB#35 R5F10NLEDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 64KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 562 шт:
термін постачання 21-31 дні (днів)
1+354.33 грн
10+306.29 грн
25+289.58 грн
160+235.50 грн
320+223.43 грн
480+200.48 грн
В кошику  од. на суму  грн.
R5F10NLGDFB#35 R5F10NLGDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 128KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
1+399.44 грн
10+345.23 грн
25+326.36 грн
160+265.45 грн
320+251.84 грн
480+225.98 грн
В кошику  од. на суму  грн.
R5F10NMEDFB#35 R5F10NMEDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10b, 3x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
2+269.03 грн
10+232.76 грн
25+220.01 грн
119+178.95 грн
238+169.77 грн
476+161.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F10NMGDFB#35 R5F10NMGDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10b, 3x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
1+425.69 грн
10+368.30 грн
25+348.12 грн
В кошику  од. на суму  грн.
R5F10NMJDFB#35 R5F10NMJDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 256KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10b, 3x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
1+481.46 грн
10+416.08 грн
25+393.33 грн
В кошику  од. на суму  грн.
R5F10NPGDFB#35 R5F10NPGDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 128KB FLSH 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 6x10b, 4x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Number of I/O: 60
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
1+329.72 грн
10+285.05 грн
25+269.46 грн
90+219.15 грн
270+207.90 грн
450+197.85 грн
В кошику  од. на суму  грн.
R5F10NPJDFB#35 R5F10NPJDFB#35 Renesas Electronics Corporation rl78i1c-datasheet-rev210 Description: IC MCU 16BIT 256KB FLSH 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 6x10b, 4x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Number of I/O: 60
DigiKey Programmable: Not Verified
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
1+469.98 грн
10+409.45 грн
25+390.39 грн
90+318.11 грн
270+303.81 грн
В кошику  од. на суму  грн.
R5F11BBCGFP#30 R5F11BBCGFP#30 Renesas Electronics Corporation rl78g1f-data-sheet Description: IC MCU 16BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 13x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
3+141.90 грн
10+122.82 грн
25+116.07 грн
80+94.41 грн
250+89.57 грн
500+85.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
R5F11BBEGFP#30 R5F11BBEGFP#30 Renesas Electronics Corporation rl78g1f-data-sheet Description: IC MCU 16BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 13x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
2+230.48 грн
10+199.12 грн
25+188.26 грн
80+153.11 грн
250+145.26 грн
500+130.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F11BGCGFB#30 R5F11BGCGFB#30 Renesas Electronics Corporation rl78g1f-datasheet-rev112 Description: IC MCU 16BIT 32KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 17x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
2+196.03 грн
10+169.89 грн
25+160.21 грн
80+128.10 грн
250+120.29 грн
500+105.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F11BGEGFB#30 R5F11BGEGFB#30 Renesas Electronics Corporation rl78g1f-datasheet-rev112 Description: IC MCU 16BIT 64KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 17x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+223.10 грн
10+193.27 грн
25+182.29 грн
80+145.77 грн
250+136.87 грн
500+119.76 грн
1000+97.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F11TLEDFB#35 R5F11TLEDFB#35 Renesas Electronics Corporation rl78i1c-datasheet Description: IC MCU 16BIT 64KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
1+349.41 грн
10+246.27 грн
25+223.77 грн
160+180.70 грн
320+173.12 грн
480+169.33 грн
В кошику  од. на суму  грн.
NP75N04YLG-E1-AY NP75N04YLG-E1-AY Renesas Electronics Corporation np75n04ylg-data-sheet Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+69.44 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP75N04YLG-E1-AY NP75N04YLG-E1-AY Renesas Electronics Corporation np75n04ylg-data-sheet Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
2+229.66 грн
10+143.27 грн
100+98.85 грн
500+74.95 грн
1000+69.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
P9221-RAHGI8 P9221-RAHGI8 Renesas Electronics Corporation p9221-r-datasheet Description: IC WIRELESS
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
товару немає в наявності
В кошику  од. на суму  грн.
P9225-RAHGI8 P9225-RAHGI8 Renesas Electronics Corporation p9225-r-datasheet Description: WIRELESS PWR
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
товару немає в наявності
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RTKA788152DE0000BU RTKA788152DE0000BU Renesas Electronics Corporation Description: RS-485 HI VOD TRANSCEIVER EVAL B
Packaging: Bulk
Function: Transceiver, RS-485
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
товару немає в наявності
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RJK0603DPN-A0#T2 RJK0603DPN-A0#T2 Renesas Electronics Corporation rjk0603dpn-a0-datasheet-0?language=en&r=1342431 Description: MOSFET N-CH 60V 80A TO220ABA
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220ABA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
товару немає в наявності
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74HC4053P-E Renesas Electronics Corporation 74HC4053.pdf Description: 74HC4053 TRIPLE SINGLE-POLE, DOU
Packaging: Bulk
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
430+48.93 грн
Мінімальне замовлення: 430
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NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2498 шт:
термін постачання 21-31 дні (днів)
2+168.96 грн
10+104.49 грн
100+71.30 грн
500+53.58 грн
1000+52.53 грн
Мінімальне замовлення: 2
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4171 шт:
термін постачання 21-31 дні (днів)
2+165.68 грн
10+102.68 грн
100+70.03 грн
500+52.59 грн
1000+48.37 грн
Мінімальне замовлення: 2
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RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 859 шт:
термін постачання 21-31 дні (днів)
1+406.82 грн
10+298.79 грн
25+275.62 грн
100+234.69 грн
250+223.28 грн
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UPD166031AT1U-E1-AY UPD166031AT1U-E1-AY Renesas Electronics Corporation upd166031at1u-data-sheet Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
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UPD166032T1U-E1-AY UPD166032T1U-E1-AY Renesas Electronics Corporation upd166032t1u-data-sheet?r=501201 Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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UPD166033T1U-E1-AY UPD166033T1U-E1-AY Renesas Electronics Corporation upd166033t1u-data-sheet Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+101.62 грн
Мінімальне замовлення: 2500
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UPD166034T1U-E1-AY UPD166034T1U-E1-AY Renesas Electronics Corporation upd166034t1u-data-sheet?r=501211 Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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PS9531L2-AX PS9531L2-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+279.69 грн
50+190.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PS9531L3-AX PS9531L3-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
2+276.41 грн
50+188.33 грн
100+154.25 грн
500+122.04 грн
Мінімальне замовлення: 2
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RBN25H125S1FPQ-A0#CB0 RBN25H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn25h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 50A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
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RBN40H125S1FPQ-A0#CB0 RBN40H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/124ns
Switching Energy: 2mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 319 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+656.98 грн
10+571.83 грн
25+545.23 грн
100+444.29 грн
250+424.32 грн
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RBN40H65T1FPQ-A0#CB0 RBN40H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
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RBN50H65T1FPQ-A0#CB0 RBN50H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn50h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
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RBN75H65T1FPQ-A0#CB0 RBN75H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn75h65t1fpq-a0-datasheet Description: IGBT TRENCH 650V 150A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
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RJP65T43DPM-00#T1 RJP65T43DPM-00#T1 Renesas Electronics Corporation rjp65t43dpm-datasheet Description: IGBT TRENCH 650V 40A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
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RJP65T54DPM-A0#T2 RJP65T54DPM-A0#T2 Renesas Electronics Corporation rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit Description: IGBT TRENCH 650V 60A TO-3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 63.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
1+843.99 грн
25+496.71 грн
100+421.55 грн
500+363.05 грн
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RMLV0414EGSB-4S2#AA1 RMLV0414EGSB-4S2#AA1 Renesas Electronics Corporation rmlv0414e-series-datasheet-rev300 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
2+306.76 грн
10+274.86 грн
25+266.68 грн
40+246.34 грн
135+236.18 грн
270+230.43 грн
Мінімальне замовлення: 2
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RMLV0816BGSD-4S2#AA1 RMLV0816BGSD-4S2#AA1 Renesas Electronics Corporation rmlv0816bgsd-4s2-datasheet Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+474.08 грн
10+416.55 грн
25+408.56 грн
40+380.65 грн
80+341.56 грн
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RMWV6416AGSA-5S2#AA0 RMWV6416AGSA-5S2#AA0 Renesas Electronics Corporation rmwv6416a-series-datasheet Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+5308.36 грн
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8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+238.28 грн
1600+196.47 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+394.52 грн
10+319.09 грн
100+258.13 грн
В кошику  од. на суму  грн.
NP100P06PDG-E1-AY NP100P06PDG-E1-AY Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+182.47 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP100P06PDG-E1-AY NP100P06PDG-E1-AY Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)
1+433.07 грн
10+279.84 грн
100+210.47 грн
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+129.46 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
1+352.69 грн
10+224.39 грн
100+158.87 грн
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
1+414.20 грн
10+279.91 грн
100+209.35 грн
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
1+384.68 грн
10+269.41 грн
100+193.18 грн
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+42.11 грн
5000+38.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 11778 шт:
термін постачання 21-31 дні (днів)
3+112.37 грн
10+88.93 грн
100+62.33 грн
500+49.47 грн
1000+44.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+42.71 грн
5000+38.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
3+111.55 грн
10+88.22 грн
100+62.33 грн
500+49.47 грн
1000+44.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
R5F52318BDFM#30 rx230-group-rx231-group-datasheet-rev120
R5F52318BDFM#30
Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 512KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 54MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: RXv2
Data Converters: A/D 12x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, SCI, SD/SDIO, SPI, SSI, USB OTG
Peripherals: Capacitive Touch, DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 43
DigiKey Programmable: Not Verified
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+688.15 грн
10+458.81 грн
25+406.07 грн
80+333.35 грн
230+301.13 грн
В кошику  од. на суму  грн.
R5F52318BDFP#30 rx230-group-rx231-group-datasheet-rev120
R5F52318BDFP#30
Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 512KB FLSH 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 54MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: RXv2
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, IrDA, SCI, SD/SDIO, SPI, SSI, USB OTG
Peripherals: Capacitive Touch, DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+488.02 грн
10+363.79 грн
25+337.16 грн
90+296.25 грн
В кошику  од. на суму  грн.
R5F52318BDLA#20 rx230-group-rx231-group-datasheet-rev120
R5F52318BDLA#20
Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 512KB FLSH 100TFLGA
Packaging: Tray
Package / Case: 100-TFLGA
Mounting Type: Surface Mount
Speed: 54MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: RXv2
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, IrDA, SCI, SD/SDIO, SPI, SSI, USB OTG
Peripherals: Capacitive Touch, DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-TFLGA (5.5x5.5)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.07 грн
10+338.28 грн
25+299.79 грн
80+277.96 грн
В кошику  од. на суму  грн.
R5F10NLEDFB#35 rl78i1c-datasheet-rev210
R5F10NLEDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 562 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+354.33 грн
10+306.29 грн
25+289.58 грн
160+235.50 грн
320+223.43 грн
480+200.48 грн
В кошику  од. на суму  грн.
R5F10NLGDFB#35 rl78i1c-datasheet-rev210
R5F10NLGDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 128KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+399.44 грн
10+345.23 грн
25+326.36 грн
160+265.45 грн
320+251.84 грн
480+225.98 грн
В кошику  од. на суму  грн.
R5F10NMEDFB#35 rl78i1c-datasheet-rev210
R5F10NMEDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10b, 3x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.03 грн
10+232.76 грн
25+220.01 грн
119+178.95 грн
238+169.77 грн
476+161.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F10NMGDFB#35 rl78i1c-datasheet-rev210
R5F10NMGDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10b, 3x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+425.69 грн
10+368.30 грн
25+348.12 грн
В кошику  од. на суму  грн.
R5F10NMJDFB#35 rl78i1c-datasheet-rev210
R5F10NMJDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 256KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10b, 3x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+481.46 грн
10+416.08 грн
25+393.33 грн
В кошику  од. на суму  грн.
R5F10NPGDFB#35 rl78i1c-datasheet-rev210
R5F10NPGDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 128KB FLSH 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 6x10b, 4x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Number of I/O: 60
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+329.72 грн
10+285.05 грн
25+269.46 грн
90+219.15 грн
270+207.90 грн
450+197.85 грн
В кошику  од. на суму  грн.
R5F10NPJDFB#35 rl78i1c-datasheet-rev210
R5F10NPJDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 256KB FLSH 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 6x10b, 4x24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Number of I/O: 60
DigiKey Programmable: Not Verified
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+469.98 грн
10+409.45 грн
25+390.39 грн
90+318.11 грн
270+303.81 грн
В кошику  од. на суму  грн.
R5F11BBCGFP#30 rl78g1f-data-sheet
R5F11BBCGFP#30
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 13x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.90 грн
10+122.82 грн
25+116.07 грн
80+94.41 грн
250+89.57 грн
500+85.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
R5F11BBEGFP#30 rl78g1f-data-sheet
R5F11BBEGFP#30
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 13x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.48 грн
10+199.12 грн
25+188.26 грн
80+153.11 грн
250+145.26 грн
500+130.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F11BGCGFB#30 rl78g1f-datasheet-rev112
R5F11BGCGFB#30
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 32KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 17x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.03 грн
10+169.89 грн
25+160.21 грн
80+128.10 грн
250+120.29 грн
500+105.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F11BGEGFB#30 rl78g1f-datasheet-rev112
R5F11BGEGFB#30
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 17x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.10 грн
10+193.27 грн
25+182.29 грн
80+145.77 грн
250+136.87 грн
500+119.76 грн
1000+97.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R5F11TLEDFB#35 rl78i1c-datasheet
R5F11TLEDFB#35
Виробник: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+349.41 грн
10+246.27 грн
25+223.77 грн
160+180.70 грн
320+173.12 грн
480+169.33 грн
В кошику  од. на суму  грн.
NP75N04YLG-E1-AY np75n04ylg-data-sheet
NP75N04YLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+69.44 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP75N04YLG-E1-AY np75n04ylg-data-sheet
NP75N04YLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+229.66 грн
10+143.27 грн
100+98.85 грн
500+74.95 грн
1000+69.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
P9221-RAHGI8 p9221-r-datasheet
P9221-RAHGI8
Виробник: Renesas Electronics Corporation
Description: IC WIRELESS
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
товару немає в наявності
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P9225-RAHGI8 p9225-r-datasheet
P9225-RAHGI8
Виробник: Renesas Electronics Corporation
Description: WIRELESS PWR
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
товару немає в наявності
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RTKA788152DE0000BU
RTKA788152DE0000BU
Виробник: Renesas Electronics Corporation
Description: RS-485 HI VOD TRANSCEIVER EVAL B
Packaging: Bulk
Function: Transceiver, RS-485
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
товару немає в наявності
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RJK0603DPN-A0#T2 rjk0603dpn-a0-datasheet-0?language=en&r=1342431
RJK0603DPN-A0#T2
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220ABA
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220ABA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
товару немає в наявності
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74HC4053P-E 74HC4053.pdf
Виробник: Renesas Electronics Corporation
Description: 74HC4053 TRIPLE SINGLE-POLE, DOU
Packaging: Bulk
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
430+48.93 грн
Мінімальне замовлення: 430
В кошику  од. на суму  грн.
NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Виробник: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Виробник: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.96 грн
10+104.49 грн
100+71.30 грн
500+53.58 грн
1000+52.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.68 грн
10+102.68 грн
100+70.03 грн
500+52.59 грн
1000+48.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 859 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+406.82 грн
10+298.79 грн
25+275.62 грн
100+234.69 грн
250+223.28 грн
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UPD166031AT1U-E1-AY upd166031at1u-data-sheet
UPD166031AT1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
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UPD166032T1U-E1-AY upd166032t1u-data-sheet?r=501201
UPD166032T1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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UPD166033T1U-E1-AY upd166033t1u-data-sheet
UPD166033T1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+101.62 грн
Мінімальне замовлення: 2500
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UPD166034T1U-E1-AY upd166034t1u-data-sheet?r=501211
UPD166034T1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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PS9531L2-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L2-AX
Виробник: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+279.69 грн
50+190.27 грн
Мінімальне замовлення: 2
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PS9531L3-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L3-AX
Виробник: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+276.41 грн
50+188.33 грн
100+154.25 грн
500+122.04 грн
Мінімальне замовлення: 2
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RBN25H125S1FPQ-A0#CB0 rbn25h125s1fpq-a0-datasheet-0
RBN25H125S1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 50A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
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RBN40H125S1FPQ-A0#CB0 rbn40h125s1fpq-a0-datasheet-0
RBN40H125S1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/124ns
Switching Energy: 2mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 319 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+656.98 грн
10+571.83 грн
25+545.23 грн
100+444.29 грн
250+424.32 грн
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RBN40H65T1FPQ-A0#CB0 rbn40h65t1fpq-a0-datasheet-0
RBN40H65T1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
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RBN50H65T1FPQ-A0#CB0 rbn50h65t1fpq-a0-datasheet-0
RBN50H65T1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
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RBN75H65T1FPQ-A0#CB0 rbn75h65t1fpq-a0-datasheet
RBN75H65T1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 150A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
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RJP65T43DPM-00#T1 rjp65t43dpm-datasheet
RJP65T43DPM-00#T1
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 40A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
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RJP65T54DPM-A0#T2 rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit
RJP65T54DPM-A0#T2
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO-3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 63.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+843.99 грн
25+496.71 грн
100+421.55 грн
500+363.05 грн
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RMLV0414EGSB-4S2#AA1 rmlv0414e-series-datasheet-rev300
RMLV0414EGSB-4S2#AA1
Виробник: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.76 грн
10+274.86 грн
25+266.68 грн
40+246.34 грн
135+236.18 грн
270+230.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RMLV0816BGSD-4S2#AA1 rmlv0816bgsd-4s2-datasheet
RMLV0816BGSD-4S2#AA1
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+474.08 грн
10+416.55 грн
25+408.56 грн
40+380.65 грн
80+341.56 грн
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RMWV6416AGSA-5S2#AA0 rmwv6416a-series-datasheet
RMWV6416AGSA-5S2#AA0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5308.36 грн
В кошику  од. на суму  грн.
8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Виробник: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Виробник: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+238.28 грн
1600+196.47 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+394.52 грн
10+319.09 грн
100+258.13 грн
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NP100P06PDG-E1-AY np100p06pdg-datasheet
NP100P06PDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+182.47 грн
Мінімальне замовлення: 800
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NP100P06PDG-E1-AY np100p06pdg-datasheet
NP100P06PDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+433.07 грн
10+279.84 грн
100+210.47 грн
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NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+129.46 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+352.69 грн
10+224.39 грн
100+158.87 грн
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+414.20 грн
10+279.91 грн
100+209.35 грн
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+384.68 грн
10+269.41 грн
100+193.18 грн
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+42.11 грн
5000+38.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 11778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.37 грн
10+88.93 грн
100+62.33 грн
500+49.47 грн
1000+44.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+42.71 грн
5000+38.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.55 грн
10+88.22 грн
100+62.33 грн
500+49.47 грн
1000+44.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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